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Zhao-Feng Lou

Showing results (1-10 of 6) with videos related to

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Nanomaterials (Basel, Switzerland)|October 23, 2021
Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub> DiodesKuo-Yu Hsiang, Chun-Yu Liao, Jer-Fu Wang, et al.
ACS Applied Materials & Interfaces|February 20, 2025
Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >10<sup>12</sup> Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved EvolutionCheng-Hong Liu, Kuo-Yu Hsiang, Zhi-Xian Li, et al.
ACS Applied Materials & Interfaces|May 4, 2026
Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric TransistorsApu Das, Agniva Paul, Mohit Tewari, et al.
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|April 5, 2022
Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)Chun-Yu Liao, Kuo-Yu Hsiang, Zhao-Feng Lou, et al.
ACS Nano|March 31, 2026
Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and ComputingApu Das, Asim Senapati, Gautham Kumar, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 27, 2026
Polarization-Enabled Piezoelectric Tellurium-Selenium (Te<sub>x</sub>Se<sub>1-</sub> <sub>x</sub>) Thin Films for Memory Switching and Artificial Synaptic FunctionsChia-Chen Chung, Mayur Chaudhary, Chia-Hung Lo, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
Nanomaterials (Basel, Switzerland)|October 23, 2021
Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub> DiodesKuo-Yu Hsiang, Chun-Yu Liao, Jer-Fu Wang, et al.
ACS Applied Materials & Interfaces|February 20, 2025
Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >10<sup>12</sup> Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved EvolutionCheng-Hong Liu, Kuo-Yu Hsiang, Zhi-Xian Li, et al.
ACS Applied Materials & Interfaces|May 4, 2026
Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric TransistorsApu Das, Agniva Paul, Mohit Tewari, et al.
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|April 5, 2022
Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)Chun-Yu Liao, Kuo-Yu Hsiang, Zhao-Feng Lou, et al.
ACS Nano|March 31, 2026
Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and ComputingApu Das, Asim Senapati, Gautham Kumar, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 27, 2026
Polarization-Enabled Piezoelectric Tellurium-Selenium (Te<sub>x</sub>Se<sub>1-</sub> <sub>x</sub>) Thin Films for Memory Switching and Artificial Synaptic FunctionsChia-Chen Chung, Mayur Chaudhary, Chia-Hung Lo, et al.
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