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Optics Letters|August 15, 2023
Improved efficiency of AlGaN-based flip-chip deep-ultraviolet LEDs using a Ni/Rh/Ni/Au p-type electrodeZhefu Liao, Zhenxing Lv, Ke Sun, et al.
Optics Letters|February 15, 2023
Enhanced performance of 275-nm AlGaN-based deep-ultraviolet LEDs via internal-roughed sapphire and SiO2-antireflection filmYinzuo Qian, Zhefu Liao, Zhenxing Lv, et al.
Optics Express|October 7, 2021
Ultra-narrowband resonant light absorber for high-performance thermal-optical modulatorsZhefu Liao, Zhengqi Liu, Yan Wang, et al.
ACS Applied Materials & Interfaces|January 24, 2024
Contact Engineering of III-Nitrides and Metal Schemes toward Efficient Deep-Ultraviolet Light-Emitting DiodesXiaoyu Zhao, Ke Sun, Zhenxing Lv, et al.
Optics Letters|December 24, 2024
Design of high-voltage deep ultraviolet LED sub-mesas toward improved optoelectronic performanceZhefu Liao, Zhenxing Lv, Bin Tang, et al.
Optics Letters|June 13, 2025
High-efficiency deep ultraviolet light-emitting diodes via δ-doping modulation of a thin p-GaN contact layerXu Liu, Bin Tang, Jingjing Jiang, et al.
Nano Letters|February 5, 2025
AlGaN Polarized Ultrathin Tunneling Junction Deep Ultraviolet Light-Emitting DiodesZiqi Zhang, Shengjun Zhou, Zhefu Liao, et al.
Optics Letters|August 15, 2025
Boosting external quantum efficiency of green flip-chip mini-LEDs by nanoimprinting hemisphere-shaped microstructure on sapphire substrateJiahao Song, Zhefu Liao, Qianxi Zhou, et al.
Science Bulletin|April 26, 2024
Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devicesSiyuan Cui, Ke Sun, Zhefu Liao, et al.
Microsystems & Nanoengineering|August 15, 2024
Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craftXu Liu, Zhenxing Lv, Zhefu Liao, et al.
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