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Nanomaterials (Basel, Switzerland)|June 18, 2020
Comprehensive Electrostatic Modeling of Exposed Quantum Dots in Graphene/Hexagonal Boron Nitride HeterostructuresEberth A Quezada-López, Zhehao Ge, Takashi Taniguchi, et al.Physical Review Letters|September 17, 2021
Sublattice Dependence and Gate Tunability of Midgap and Resonant States Induced by Native Dopants in Bernal-Stacked Bilayer GrapheneFrédéric Joucken, Cristina Bena, Zhehao Ge, et al.Physical Review Letters|October 8, 2021
Control of Giant Topological Magnetic Moment and Valley Splitting in Trilayer GrapheneZhehao Ge, Sergey Slizovskiy, Frédéric Joucken, et al.Nature Nanotechnology|March 6, 2023
Giant orbital magnetic moments and paramagnetic shift in artificial relativistic atoms and moleculesZhehao Ge, Sergey Slizovskiy, Peter Polizogopoulos, et al.Nano Letters|August 20, 2021
Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer GrapheneFrédéric Joucken, Cristina Bena, Zhehao Ge, et al.Nano Letters|November 23, 2020
Visualization and Manipulation of Bilayer Graphene Quantum Dots with Broken Rotational Symmetry and Nontrivial TopologyZhehao Ge, Frederic Joucken, Eberth Quezada, et al.Nano Letters|May 9, 2022
Ultrasharp Lateral p-n Junctions in Modulation-Doped GrapheneJesse Balgley, Jackson Butler, Sananda Biswas, et al.Nano Letters|March 20, 2019
Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission SpectroscopyFrédéric Joucken, Jose Avila, Zhehao Ge, et al.Nature|November 28, 2024
Direct visualization of relativistic quantum scars in graphene quantum dotsZhehao Ge, Anton M Graf, Joonas Keski-Rahkonen, et al.Nano Letters|October 26, 2021
Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum DotsZhehao Ge, Dillon Wong, Juwon Lee, et al.Pageof 2