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Advanced Materials (Deerfield Beach, Fla.)|January 8, 2026
High-κ Perovskite-Like Ternary Niobium Oxide Dielectrics for 2D ElectronicsBiao Zhang, Jianmiao Guo, Jianmin Yan, et al.
Nature Communications|March 18, 2026
High-speed energy-efficient memristor confined in sub-5 nm space with elemental oxygen reservoir layerChenfei Li, Wencheng Niu, Da Wan, et al.
Nano Letters|July 11, 2023
Ultimate Limit in Optoelectronic Performances of Monolayer WSe<sub>2</sub> Sloping-Channel TransistorsZhengdao Xie, Guoli Li, Shengxuan Xia, et al.
Science Advances|October 27, 2021
Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slopeJingli Wang, Lejuan Cai, Jiewei Chen, et al.
ACS Nano|October 10, 2025
Transferable Highly Crystalline Perovskite Ferroelectrics for Low-Power MemoryTianqing Wan, Yiping Xiao, Zhihang Xu, et al.
ACS Nano|August 15, 2022
Strain Releasing of Flexible 2D Electronics through van der Waals Sliding ContactZhiwei Li, Yang Chen, Songlong Liu, et al.
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