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Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
August 4, 2025
Flexible Memory Application of Nanoscale Ti-Ge-Te Thin Film as Information Storage Medium With Excellent Thermal Stability, Low Resistance Drift and Superior Bending Characteristic
Han Gu, Weihua Wu, Xiaochen Zhou, et al.
Sensors (Basel, Switzerland)
|
July 8, 2023
A Self-Organizing Multi-Layer Agent Computing System for Behavioral Clustering Recognition
Xingyu Qian, Aximu Yuemaier, Wenchi Yang, et al.
Nanotechnology
|
November 13, 2015
Synthesis and low-temperature photoluminescence properties of SnO2 nanowires and nanobelts
Suhua Luo, Jiyang Fan, Weili Liu, et al.
Science Bulletin
|
January 19, 2023
Multi-level phase-change memory with ultralow power consumption and resistance drift
Bin Liu, Kaiqi Li, Wanliang Liu, et al.
Nanotechnology
|
December 15, 2020
Transparent HfO <sub>x</sub> -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement
Ange Liang, Jingwei Zhang, Fang Wang, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
June 17, 2022
Neuromorphic Photonic Memory Devices Using Ultrafast, Non-Volatile Phase-Change Materials
Xiaozhang Chen, Yuan Xue, Yibo Sun, et al.
Nanoscale
|
October 23, 2015
Rapid flame synthesis of internal Mo(6+) doped TiO2 nanocrystals in situ decorated with highly dispersed MoO3 clusters for lithium ion storage
Yunfeng Li, Yanjie Hu, Jianhua Shen, et al.
ACS Applied Materials & Interfaces
|
July 27, 2016
Reversible Phase Change Characteristics of Cr-Doped Sb2Te3 Films with Different Initial States Induced by Femtosecond Pulses
Qing Wang, Minghui Jiang, Bo Liu, et al.
Nanoscale
|
November 27, 2018
Electrical switching properties and structural characteristics of GeSe-GeTe films
Kun Ren, Min Zhu, Wenxiong Song, et al.
Nanomaterials (Basel, Switzerland)
|
March 29, 2023
Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application
Jiarui Zhang, Wencheng Fang, Ruobing Wang, et al.
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Showing results (61-70 of 112) with videos related to
Sort By:
Page
of 12
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
August 4, 2025
Flexible Memory Application of Nanoscale Ti-Ge-Te Thin Film as Information Storage Medium With Excellent Thermal Stability, Low Resistance Drift and Superior Bending Characteristic
Han Gu, Weihua Wu, Xiaochen Zhou, et al.
Sensors (Basel, Switzerland)
|
July 8, 2023
A Self-Organizing Multi-Layer Agent Computing System for Behavioral Clustering Recognition
Xingyu Qian, Aximu Yuemaier, Wenchi Yang, et al.
Nanotechnology
|
November 13, 2015
Synthesis and low-temperature photoluminescence properties of SnO2 nanowires and nanobelts
Suhua Luo, Jiyang Fan, Weili Liu, et al.
Science Bulletin
|
January 19, 2023
Multi-level phase-change memory with ultralow power consumption and resistance drift
Bin Liu, Kaiqi Li, Wanliang Liu, et al.
Nanotechnology
|
December 15, 2020
Transparent HfO <sub>x</sub> -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement
Ange Liang, Jingwei Zhang, Fang Wang, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
June 17, 2022
Neuromorphic Photonic Memory Devices Using Ultrafast, Non-Volatile Phase-Change Materials
Xiaozhang Chen, Yuan Xue, Yibo Sun, et al.
Nanoscale
|
October 23, 2015
Rapid flame synthesis of internal Mo(6+) doped TiO2 nanocrystals in situ decorated with highly dispersed MoO3 clusters for lithium ion storage
Yunfeng Li, Yanjie Hu, Jianhua Shen, et al.
ACS Applied Materials & Interfaces
|
July 27, 2016
Reversible Phase Change Characteristics of Cr-Doped Sb2Te3 Films with Different Initial States Induced by Femtosecond Pulses
Qing Wang, Minghui Jiang, Bo Liu, et al.
Nanoscale
|
November 27, 2018
Electrical switching properties and structural characteristics of GeSe-GeTe films
Kun Ren, Min Zhu, Wenxiong Song, et al.
Nanomaterials (Basel, Switzerland)
|
March 29, 2023
Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application
Jiarui Zhang, Wencheng Fang, Ruobing Wang, et al.
Page
of 12