Zhong-Yi Liang - JoVE Visualize

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Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu|August 4, 2006

[Luminescence properties of Ba2MgSi2O7 : RE]Yan-Ning Shi, Da-Wei He, Zhong-Yi Liang

Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu|October 6, 2006

[VUV spectral properties of MO-Y2O3-B2O3 : Re (M = Mg, Sr; Re = Eu, Tb)]Zhong-Yi Liang, Da-Wei He, Yan-Ning Shi

ACS Applied Materials & Interfaces|December 22, 2016

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire SubstrateWen-Cheng Ke, Fang-Wei Lee, Chih-Yung Chiang, et al.

ACS Applied Materials & Interfaces|November 28, 2019

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping LayerWen-Cheng Ke, Solomun Teklahymanot Tesfay, Tae-Yeon Seong, et al.

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Showing results (1-10 of 4) with videos related to

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Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu|August 4, 2006

[Luminescence properties of Ba2MgSi2O7 : RE]Yan-Ning Shi, Da-Wei He, Zhong-Yi Liang

Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu|October 6, 2006

[VUV spectral properties of MO-Y2O3-B2O3 : Re (M = Mg, Sr; Re = Eu, Tb)]Zhong-Yi Liang, Da-Wei He, Yan-Ning Shi

ACS Applied Materials & Interfaces|December 22, 2016

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire SubstrateWen-Cheng Ke, Fang-Wei Lee, Chih-Yung Chiang, et al.

ACS Applied Materials & Interfaces|November 28, 2019

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping LayerWen-Cheng Ke, Solomun Teklahymanot Tesfay, Tae-Yeon Seong, et al.

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