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Journal of Research of the National Institute of Standards and Technology|February 11, 2017
Development of a Coulometric Method for Assessing the Concentration of Ambient Levels of CO2/Air in Compressed Gas MixturesG D Mitchell, A A BellJournal of Research of the National Institute of Standards and Technology|February 11, 2017
Simulators of Superconductor Critical Current: Design, Characteristics, and ApplicationsL F Goodrich, A N Srivastava, T C StaufferJournal of Research of the National Institute of Standards and Technology|February 11, 2017
Molar Heat Capacity (Cv) for Saturated and Compressed Liquid and Vapor Nitrogen from 65 to 300 K at Pressures to 35 MPaJ W MageeJournal of Research of the National Institute of Standards and Technology|February 10, 2017
Apparatus for Simultaneous Small Angle Neutron Scattering and Steady Shear Viscosity Studies of Polymer Melts and SolutionsAlan I Nakatani, Hongdoo Kim, Charles C HanJournal of Research of the National Institute of Standards and Technology|February 10, 2017
Observation and an Explanation of Breakdown of the Quantum Hall EffectM E Cage, D Y Yu, G Marullo ReedtzJournal of Research of the National Institute of Standards and Technology|February 10, 2017
ENEA Reference Atmosphere Facility for Testing Radon and Daughters Measuring EquipmentG Sciocchetti, F Scacco, S Tosti, et al.Journal of Research of the National Institute of Standards and Technology|February 10, 2017
Standards for Waveform Metrology Based on Digital TechniquesBarry A BellJournal of Research of the National Institute of Standards and Technology|February 10, 2017
Tables of the Inverse Laplace Transform of the Function [Formula: see text]Menachem Dishon, John T Bendler, George H WeissJournal of Research of the National Institute of Standards and Technology|February 10, 2017
Recommended Values of the Fundamental Physical Constants: A Status ReportBarry N Taylor, E Richard CohenJournal of Research of the National Institute of Standards and Technology|February 10, 2017
An Accurate Value for the Absorption Coefficient of Silicon at 633 nmJon Geist, A Russell Schaefer, Jun-Feng Song, et al.Pageof 111