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Nanotechnology|December 20, 2016
Ultraclean suspended monolayer graphene achieved by in situ current annealingHaidong Wang, Xing Zhang, Hiroshi Takamatsu
Nanotechnology|December 20, 2016
Temperature-dependent transport and hysteretic behaviors induced by interfacial states in MoS2 field-effect transistors with lead-zirconate-titanate ferroelectric gatingYilin Sun, Dan Xie, Xiaowen Zhang, et al.
Nanotechnology|December 20, 2016
Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodesJae-Seong Park, Jae-Ho Kim, Jun-Yong Kim, et al.
Nanotechnology|December 29, 2016
Air-stable few-layer black phosphorus phototransistor for near-infrared detectionJunhong Na, Kichul Park, Jin Tae Kim, et al.
Nanotechnology|December 29, 2016
Fabrication of Bi2Te3-x Se x nanowires with tunable chemical compositions and enhanced thermoelectric propertiesShuai Liu, Nan Peng, Chongjian Zhou, et al.
Nanotechnology|December 29, 2016
A novel fabrication methodology for sulfur-doped ZnO nanorods as an active photoanode for improved water oxidation in visible-light regimeA Khan, M I Ahmed, A Adam, et al.
Nanotechnology|December 29, 2016
Quantitative stability analyses of multiwall carbon nanotube nanofluids following water/ice phase change cyclingJason Ivall, Gabriel Langlois-Rahme, Sylvain Coulombe, et al.
Nanotechnology|December 29, 2016
Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cellsMatthew Zervos, Eugenia Vasile, Eugeniu Vasile, et al.
Nanotechnology|December 29, 2016
Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineeringZongwei Wang, Jian Kang, Zhizhen Yu, et al.
Nanotechnology|December 29, 2016
Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulationChoong-Ki Kim, Eun Gyo Jeong, Eungtaek Kim, et al.
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