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Science and Technology of Advanced Materials|November 21, 2024
Lightweight acoustic hyperbolic paraboloid diaphragms with graphene through self-assembly nanoarchitectonicsMo Lin, Maxim Trubianov, Kou Yang, et al.Science and Technology of Advanced Materials|November 20, 2024
Emerging computational and machine learning methodologies for proton-conducting oxides: materials discovery and fundamental understandingSusumu Fujii, Junji Hyodo, Kazuki Shitara, et al.Science and Technology of Advanced Materials|May 27, 2024
A redox homeostasis disruptor based on a biodegradable nanoplatform for ultrasound (US) imaging-guided high-performance ferroptosis therapy of tumorsXia Li, Huijian Lin, Jianbo Hu, et al.Science and Technology of Advanced Materials|March 21, 2020
Novel Mg-ion conductive oxide of μ-cordierite Mg0.6Al1.2Si1.8O6Hayami Takeda, Koki Nakano, Naoto Tanibata, et al.Science and Technology of Advanced Materials|March 21, 2020
Versatile surface for solid-solid/liquid-solid triboelectric nanogenerator based on fluorocarbon liquid infused surfacesJihoon Chung, Handong Cho, Hyungseok Yong, et al.Science and Technology of Advanced Materials|June 14, 2021
Nanomaterials and their composite scaffolds for photothermal therapy and tissue engineering applicationsRui Sun, Huajian Chen, Linawati Sutrisno, et al.Science and Technology of Advanced Materials|June 22, 2017
Evaluation of in vitro cytotoxicity, biocompatibility, and changes in the expression of apoptosis regulatory proteins induced by cerium oxide nanocrystalsShahanavaj Khan, Anees A Ansari, Christian Rolfo, et al.Science and Technology of Advanced Materials|June 2, 2017
Tensorial elastic properties and stability of interface states associated with Σ5(210) grain boundaries in Ni3(Al,Si)Martin Friák, Monika Všianská, David Holec, et al.Science and Technology of Advanced Materials|June 2, 2017
A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk waferZiyi Zhang, Motoki Yako, Kan Ju, et al.Science and Technology of Advanced Materials|June 2, 2017
Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heatingMasao Sakuraba, Katsutoshi Sugawara, Takayuki Nosaka, et al.Pageof 149