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Science and Technology of Advanced Materials|November 24, 2016
On the origin of fine structure in the photoluminescence spectra of the β-sialon:Eu2+ green phosphorKohsei Takahashi, Ken-Ichi Yoshimura, Masamichi Harada, et al.Science and Technology of Advanced Materials|November 24, 2016
Quantitative comparison between poly(L-arginine) and poly(L-lysine) at each step of polyplex-based gene transfection using a microinjection techniqueTomoko Hashimoto, Takeshi Kawazu, Takeshi Nagasaki, et al.Science and Technology of Advanced Materials|November 24, 2016
Low-cost and fast synthesis of nanoporous silica cryogels for thermal insulation applicationsLi Fen Su, Lei Miao, Sakae Tanemura, et al.Science and Technology of Advanced Materials|November 24, 2016
Production and properties of electrosprayed sericin nanopowderNajmeh Hazeri, Hossein Tavanai, Ali Reza MoradiScience and Technology of Advanced Materials|November 24, 2016
Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3Sergej Alexandrovich Filonovich, Hugo Águas, Tito Busani, et al.Science and Technology of Advanced Materials|November 24, 2016
Development of a simple method for fabrication of transparent conductive films with high mechanical strengthIchiro Imae, Yuto Nakamura, Kenji Komaguchi, et al.Science and Technology of Advanced Materials|November 24, 2016
Synthesis of biocompatible multicolor luminescent carbon dots for bioimaging applicationsNagaprasad Puvvada, B N Prashanth Kumar, Suraj Konar, et al.Science and Technology of Advanced Materials|November 24, 2016
Chemical stabilization of porous silicon for enhanced biofunctionalization with immunoglobulinNelson Naveas, Vicente Torres Costa, Dario Gallach, et al.Science and Technology of Advanced Materials|November 24, 2016
Theoretical and experimental investigation of magnetotransport in iron chalcogenidesFederico Caglieris, Fabio Ricci, Gianrico Lamura, et al.Science and Technology of Advanced Materials|November 24, 2016
Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structuresVishal Ajit Shah, Maksym Myronov, Chalermwat Wongwanitwatana, et al.Pageof 149