Mark Holtz
2PUBLICATIONS
3CO-AUTHORS
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Publications (2)
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|Apr 07, 2021
Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by <i>In Situ</i> Tailoring the SiN<sub></sub> Passivation Layer.Anwar Siddique, Raju Ahmed, Jonathan Anderson
|Aug 19, 2020
Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth.Raju Ahmed, Anwar Siddique, Jonathan Anderson
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