Thomas Auzelle
7PUBLICATIONS
16CO-AUTHORS
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Publications (7)
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|Jun 11, 2024
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles.Jingxuan Kang, Rose-Mary Jose, Miriam Oliva
|May 17, 2024
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures.Philipp John, Achim Trampert, Duc Van Dinh
|Aug 14, 2023
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires.P John, M Gómez Ruiz, L van Deurzen
|Jun 13, 2023
Density control of GaN nanowires at the wafer scale using self-assembled SiNpatches on sputtered TiN(111).T Auzelle, M Oliva, P John
|Feb 06, 2023
A route for the top-down fabrication of ordered ultrathin GaN nanowires.M Oliva, V Kaganer, M Pudelski
|Sep 22, 2022
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation.Sergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann
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Frequent Collaborators
7 joint publications
Oliver Brandt
4 joint publications
Jonas Lähnemann
3 joint publications
Miriam Oliva
2 joint publications
Philipp John
2 joint publications
Achim Trampert
2 joint publications
Sergio Fernández-Garrido
1 joint publications
V Kaganer
1 joint publications
M Ramsteiner
1 joint publications
L van Deurzen
1 joint publications
Florian Ullrich
