Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Feng-Tso Chien

3PUBLICATIONS
4CO-AUTHORS
Photovoltaic devices (solar cells)Engineering electromagneticsElectrical energy generation (incl. renewables, excl. photovoltaics)
Featured researcher

Get your video featured.

JoVEPublish with JoVE
Featured researcher

Get your video featured.

JoVEPublish with JoVE
Journal

Publications (3)

Sort by Publication Date:
|Apr 21, 2022
Thin-Film Transistors.

Feng-Tso Chien, Yu-Wei Chang, Jo-Chin Liu

|Oct 22, 2021
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al<sub>2</sub>O<sub>3</sub>/AlN Composite Gate Insulator.

Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang

|Feb 04, 2021
Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor.

Feng-Tso Chien, Jing Ye, Wei-Cheng Yen

Pageof 1

Frequent Collaborators

1 joint publications

Hsien-Chin Chiu

1 joint publications

Hsuan-Ling Kao

1 joint publications

Yu-Wei Chang

1 joint publications

Jo-Chin Liu

Frequent Collaborators

1 joint publications

Hsien-Chin Chiu

1 joint publications

Hsuan-Ling Kao

1 joint publications

Yu-Wei Chang

1 joint publications

Jo-Chin Liu

Top Related Videos

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on : Aug 29, 2025

136
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on : Nov 24, 2016

8.7K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on : May 24, 2020

9.0K
See more related videos

Top Related Videos

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on : Aug 29, 2025

136
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on : Nov 24, 2016

8.7K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on : May 24, 2020

9.0K
See more related videos