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Sangjin Min

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Elemental semiconductors

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|Jan 11, 2024

Growth of Ga<sub>0.70</sub>In<sub>0.30</sub>N/GaN Quantum-Wells on a ScAlMgO<sub>4</sub> (0001) Substrate with an <i>Ex</i>-<i>Situ</i> Sputtered-AlN Buffer Layer.

Dong-Guang Zheng, Sangjin Min, Jiwon Kim

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Dong-Guang Zheng

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Dong-Guang Zheng

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