Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Xinge Tao

3PUBLICATIONS
1CO-AUTHORS
Electrical energy generation (incl. renewables, excl. photovoltaics)Nanoelectromechanical systems
Featured researcher

Get your video featured.

JoVEPublish with JoVE
Featured researcher

Get your video featured.

JoVEPublish with JoVE
Journal

Publications (3)

Sort by Publication Date:
|Dec 23, 2022
Steep-Slope and Hysteresis-Free MoS<sub>2</sub> Negative-Capacitance Transistors Using Single HfZrAlO Layer as Gate Dielectric.

Xinge Tao, Lu Liu, Jingping Xu

|Jul 30, 2021
Impacts of HfZrO thickness and anneal temperature on performance of MoS<sub>2</sub>negative-capacitance field-effect transistors.

Xinge Tao, Lu Liu, Lei Yang

|Jan 28, 2021
Improved subthreshold swing of MoS<sub>2</sub> negative-capacitance transistor by fluorine-plasma treatment on ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> gate dielectric.

Xinge Tao, Jingping Xu, Lu Liu

Pageof 1

Frequent Collaborators

1 joint publications

Jingping Xu

Frequent Collaborators

1 joint publications

Jingping Xu

Top Related Videos

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on : Oct 23, 2018

7.7K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on : May 24, 2020

8.9K
See more related videos

Top Related Videos

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on : Oct 23, 2018

7.7K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on : May 24, 2020

8.9K
See more related videos