Yann Beilliard
4PUBLICATIONS
7CO-AUTHORS
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Publications (4)
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|Jul 17, 2024
CMOS-compatible Hf0.5Zr0.5O2-based ferroelectric memory crosspoints fabricated with damascene process.Dorian Coffineau, Nicolas Gariépy, Benoit Manchon
|Jun 24, 2021
Oxygen vacancy engineering of TaO-based resistive memories by Zr doping for improved variability and synaptic behavior.João H Quintino Palhares, Yann Beilliard, Fabien Alibart
|Jul 17, 2020
Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories.Yann Beilliard, François Paquette, Frédéric Brousseau
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