Yann Beilliard

4PUBLICATIONS
7CO-AUTHORS
Radiation and matterElectrical energy generation (incl. renewables, excl. photovoltaics)Circuits and systems
Featured researcher

Get your video featured.

JoVEPublish with JoVE
Journal

Publications (4)

|Jul 17, 2024
CMOS-compatible Hf0.5Zr0.5O2-based ferroelectric memory crosspoints fabricated with damascene process.

Dorian Coffineau, Nicolas Gariépy, Benoit Manchon

|Feb 15, 2022
Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2resistive memories (2020Nanotechnology31 445205).

Yann Beilliard, François Paquette, Frédéric Brousseau

|Jun 24, 2021
Oxygen vacancy engineering of TaO-based resistive memories by Zr doping for improved variability and synaptic behavior.

João H Quintino Palhares, Yann Beilliard, Fabien Alibart

|Jul 17, 2020
Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories.

Yann Beilliard, François Paquette, Frédéric Brousseau

Pageof 1

Frequent Collaborators

1 joint publications

João H Quintino Palhares

1 joint publications

Everton Bonturim

1 joint publications

Daniel Z de Florio

1 joint publications

Fabio C Fonseca