Sk Ziaur Rahaman

2PUBLICATIONS
0CO-AUTHORS
Elemental semiconductorsElectrical energy storage
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Publications (2)

|Apr 20, 2017
The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories.

Sk Ziaur Rahaman, Yu-De Lin, Heng-Yuan Lee

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