Serikbek Sailanbek
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Electrical energy transmission, networks and systems
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Materials (Basel, Switzerland)
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May 27, 2026
Solution-Processed High-k HfO2 Gate Insulator for High-Performance Indium-Zinc-Oxide Thin-Film Transistors: Optimisation of Annealing Temperature and Insulator Thickness.
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Kamale Tuokedaerhan
Frequent Collaborators
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joint publications
Kamale Tuokedaerhan
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