Vladimir G Dubrovskii

24PUBLICATIONS
43CO-AUTHORS
Elemental semiconductorsDegenerate quantum gases and atom opticsExperimental methods in fluid flow, heat and mass transferNanofabrication, growth and self assemblyNanoelectronics
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Publications (24)

|Aug 19, 2025
The role of composition and diameter in the crystal purity of InAsxP1-x nanowires.

Giada Bucci, Vladimir G Dubrovskii, Valentina Zannier

|Dec 05, 2024
Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties.

Paweł Holewa, Shima Kadkhodazadeh, Michał Gawełczyk

|Jul 10, 2023
From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE.

Nicholas Morgan, Vladimir G Dubrovskii, Ann-Kristin Stief

|Nov 10, 2022
Kinetic modeling of interfacial abruptness in axial nanowire heterostructures.

E D Leshchenko, V G Dubrovskii

|Aug 11, 2022
Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch.

Didem Dede, Frank Glas, Valerio Piazza

|Mar 09, 2022
Enhancing the incorporation of Sn in vapor-liquid-solid GeSn nanowires by modulation of the droplet composition.

Mohammed Zeghouane, Hadi Hijazi, Franck Bassani

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