Jian-Qing Dai
10PUBLICATIONS
3CO-AUTHORS

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Publications (10)
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|Apr 03, 2026
Efficient Carrier Tunneling and Weak Fermi-Level Pinning Enabled by Intrinsic Covalent-like Quasi-bonding Interactions in van der Waals Metal-Semiconductor Junctions.Da-Wei Deng, Jian-Qing Dai, Jin Yuan
|Jan 06, 2026
Field-effect transistors based on an In2Se3-graphene vdW ferroelectric heterojunction for high-performance and low-power logic applications.Miao-Wei Zhao, Jian-Qing Dai, Jin Yuan
|Oct 04, 2025
5 nm Gate length field-effect transistors based on monolayer α-In2X3 (X = S, Se, Te).Yun-Ya Zhong, Jian-Qing Dai, Jin Yuan
|Dec 04, 2023
The tunneling electroresistance effect in a van der Waals ferroelectric tunnel junction based on a graphene/In2Se3/MoS2/graphene heterostructure.Yu-Zhu Liu, Jian-Qing Dai, Jin Yuan
|Sep 15, 2023
Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces.Jin Yuan, Jian-Qing Dai, Yu-Zhu Liu
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