Hyungwoo Kim
3PUBLICATIONS
5CO-AUTHORS
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Publications (3)
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|Nov 17, 2021
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2devices by control of oxygen-deficient layer.Manoj Yadav, Alireza Kashir, Seungyeol Oh
|Apr 27, 2021
Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2ferroelectric device.Hyungwoo Kim, Alireza Kashir, Seungyeol Oh
|Oct 14, 2020
A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices.Hyungwoo Kim, Alireza Kashir, Seungyeol Oh
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