Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Anand Kumar Rai

2PUBLICATIONS

3CO-AUTHORS

Photovoltaic power systemsElectrical energy generation (incl. renewables, excl. photovoltaics)

Featured researcher

Get your video featured.

Publish with JoVE

Featured researcher

Get your video featured.

Publish with JoVE

Publications (2)

Sort by Publication Date:

|Dec 17, 2024

Reconfiguration of Intrinsic Depletion-Mode Characteristics of MoS<sub>2</sub> Field-Effect Transistors to High-Performance Enhancement-Mode Operation Using an Argon Plasma-Induced p-Type Doping Technique.

Anand Kumar Rai, Asif A Shah, Aadil Bashir Dar

|Feb 12, 2024

MoS<sub>2</sub> Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation.

Anand Kumar Rai, Asif A Shah, Jeevesh Kumar

Pageof 1

Frequent Collaborators

1 joint publications

Jeevesh Kumar

1 joint publications

Aadil Bashir Dar

1 joint publications

Mayank Shrivastava

Frequent Collaborators

1 joint publications

Jeevesh Kumar

1 joint publications

Aadil Bashir Dar

1 joint publications

Mayank Shrivastava

Top Related Videos

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on : Oct 23, 2018

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on : Dec 05, 2015

See more related videos

Top Related Videos

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on : Oct 23, 2018

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on : Dec 05, 2015

See more related videos