Jove
Visualize
Contáctanos

Videos de Conceptos Relacionados

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por
Same author

[Discussion on strengthening yin of chinese herbs with bitter-flavor clinical traditional Chinese pharmacology noun terminology standardization research].

Zhongguo Zhong yao za zhi = Zhongguo zhongyao zazhi = China journal of Chinese materia medica·2014
Same author

Method to resolve microphone and sample location errors in the two-microphone duct measurement method

The Journal of the Acoustical Society of America·2000
Same author

Evaluation of Secnidazole Gel and Tinidazole Suspension in the Treatment of Giardiasis in Children.

The Brazilian journal of infectious diseases : an official publication of the Brazilian Society of Infectious Diseases·2000
Same author

Nonmonotonic behavior of mobility in a multidimensional overdamped periodic system

Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics·2000
Same author

First friedel-crafts diacylation of a phenanthrene as the basis for an efficient synthesis of nonracemic

The Journal of organic chemistry·2000
Same author

In Situ (1)H MAS NMR Spectroscopic Observation of Proton Species on a Mo-Modified HZSM-5 Zeolite Catalyst for the Dehydroaromatization of Methane We are grateful for the support of the National Natural Science Foundation of China and the Ministry of Science and Technology of China.

Angewandte Chemie (International ed. in English)·2000
JoVE
x logofacebook logolinkedin logoyoutube logo
ACERCA DE JoVE
Visión GeneralLiderazgoBlogCentro de Ayuda JoVE
AUTORES
Proceso de PublicaciónConsejo EditorialAlcance y PolíticasRevisión por ParesPreguntas FrecuentesEnviar
BIBLIOTECARIOS
TestimoniosSuscripcionesAccesoRecursosConsejo Asesor de BibliotecasPreguntas Frecuentes
INVESTIGACIÓN
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchivo
EDUCACIÓN
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualCentro de Recursos para ProfesoresSitio de Profesores
Términos y Condiciones de Uso
Política de Privacidad
Políticas

Video Experimental Relacionado

Updated: May 12, 2026

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

Circuitos integrados complementarios a gran escala basados en transistores orgánicos.

Crone1, Dodabalapur, Lin

  • 1Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA.

Nature
|February 17, 2000
PubMed
Resumen

Los circuitos orgánicos complementarios integran hasta 864 transistores, logrando velocidades de 1 kHz. Este avance ofrece una mayor eficiencia energética y estabilidad para la electrónica orgánica, allanando el camino para aplicaciones complejas.

Más Videos Relacionados

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
10:05

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Videos de Experimentos Relacionados

Last Updated: May 12, 2026

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
10:05

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Área de la Ciencia:

  • Ciencia de los materiales Ciencia de los materiales.
  • Ingeniería Electrónica Ingeniería Electrónica Ingeniería.
  • Física de los semiconductores orgánicos Física de los semiconductores orgánicos

Sus antecedentes:

  • Los transistores orgánicos de película delgada (OTFT) ofrecen alternativas flexibles y de bajo costo a la electrónica inorgánica para aplicaciones como pantallas y etiquetas RFID.
  • Lograr una disipación de energía mínima y un rendimiento estable es fundamental para los circuitos digitales, a menudo realizados utilizando lógica complementaria en silicio.
  • La integración de los transistores orgánicos de tipo p y tipo n es esencial para el desarrollo de circuitos integrados orgánicos avanzados.

Objetivo del estudio:

  • Investigar la viabilidad y el rendimiento de circuitos lógicos complementarios utilizando materiales semiconductores orgánicos.
  • Demostrar escalas de integración mejoradas y velocidades operativas en circuitos orgánicos complementarios.
  • Evaluar el potencial de los circuitos orgánicos complementarios para reducir el consumo de energía y mejorar la estabilidad.

Principales métodos:

  • Fabricación de circuitos integrados utilizando transistores orgánicos de película delgada de tipo p y tipo n.
  • Diseño e implementación de circuitos complementarios secuenciales sincronizados.
  • Caracterización del rendimiento del circuito, incluida la escala de integración y la velocidad de operación.

Principales resultados:

  • Demostró la integración exitosa de hasta 864 transistores dentro de un solo circuito orgánico complementario.
  • Se han logrado velocidades de funcionamiento de aproximadamente 1 kHz en circuitos complementarios secuenciales sincronizados.
  • Valida los beneficios de la lógica complementaria para la electrónica orgánica, incluido el potencial para reducir la disipación de energía y mejorar la estabilidad.

Conclusiones:

  • Los circuitos lógicos complementarios se pueden implementar con éxito utilizando materiales orgánicos semiconductores, lo que permite una integración a mayor escala.
  • Los circuitos orgánicos complementarios exhiben velocidades operativas prometedoras adecuadas para diversas aplicaciones electrónicas.
  • Este enfoque representa un paso significativo hacia la realización de circuitos integrados orgánicos de alto rendimiento, estabilidad y eficiencia energética.