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When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
Dual Nature of Electromagnetic (EM) Radiation01:10

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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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La electroluminiscencia intersubbanda de las estructuras de cascada cuántica basadas en silicio.

G Dehlinger1, L Diehl, U Gennser

  • 1Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen, Switzerland. gabriel.dehlinger@psi.ch

Science (New York, N.Y.)
|January 11, 2000
PubMed
Resumen

Los investigadores observaron electroluminiscencia intersubbanda en las estructuras de cascada cuántica de silicio / silicio-germanio de silicio. Este avance podría permitir componentes ópticos activos en tecnología basada en silicio, con vidas comparables a las de los láseres existentes.

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Área de la Ciencia:

  • Física de los semiconductores Física de los semiconductores
  • La optoelectrónica es la óptica electrónica.
  • Ciencia de los materiales Ciencia de los materiales.

Sus antecedentes:

  • Los láseres de cascada cuántica (QCL) utilizan transiciones electrónicas dentro de bandas de semiconductores.
  • La integración de componentes ópticos activos en la tecnología de silicio es un desafío significativo.
  • Los QCL requieren anchos de línea estrechos y largas vidas de estado superior para una operación eficiente.

Objetivo del estudio:

  • Informar sobre la observación de la electroluminiscencia entre subbandas en una estructura de cascada cuántica de silicio/ silicio-germanio tipo p.
  • Investigar el potencial de los materiales basados en silicio para aplicaciones de QCL.
  • Evaluar las características de rendimiento, como el ancho de línea y la vida útil, de estas nuevas estructuras.

Principales métodos:

  • Fabricación de una estructura de cascada cuántica de silicio/ silicio-germanio tipo p.
  • Medición de los espectros de electroluminiscencia y polarización.
  • Caracterización dependiente de la temperatura hasta 180 Kelvin.
  • Análisis de vidas no radiativas basadas en el diseño de pozos cuánticos.

Principales resultados:

  • Se observó electroluminiscencia intersubbanda centrada en 130 meV con un ancho de línea de 22 meV.
  • La electroluminiscencia exhibió la polarización esperada y fue detectable hasta 180 K.
  • Las vidas no radiactivas dependieron fuertemente del diseño del pozo cuántico.
  • Se han logrado tiempos de vida no radiactivos comparables a las estructuras láser GaInAs/AlInAs establecidas.

Conclusiones:

  • Demostró la viabilidad de la electroluminiscencia intersubbanda en estructuras de cascada cuántica de silicio / silicio-germanio de silicio.
  • Las características observadas sugieren potencial para dispositivos ópticos activos basados en silicio.
  • La optimización adicional del diseño del pozo cuántico puede producir vidas adecuadas para aplicaciones prácticas de láser.