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Published on: June 3, 2015
Manipulación de la carga elemental en un dispositivo acoplado a carga de silicio
1Ntt Basic Research Laboratories, 3-1 Morinosata Wakamiya, Atsugi, Kanagawa 243-0198, Japan. afuji@aecl.ntt.co.jp
Nature
|March 30, 2001
Resumen
Los investigadores desarrollaron un nuevo dispositivo basado en silicio para manipular cargas elementales individuales. Este nuevo dispositivo acoplado a carga ofrece una alternativa más simple y escalable a las tecnologías de túnel de un solo electrón existentes.
Área de la Ciencia:
- Física del estado sólido Física del estado sólido
- La nanoelectrónica es la nanoelectrónica.
- Dispositivos de semiconductores Dispositivos de semiconductores.
Sus antecedentes:
- El límite máximo para el funcionamiento de dispositivos electrónicos es la manipulación de una sola carga.
- Los dispositivos de túnel de un solo electrón existentes, si bien son capaces de esto, son complejos de fabricar.
- Existe la necesidad de dispositivos más simples y escalables para la manipulación de cargas elementales.
Objetivo del estudio:
- Para demostrar un nuevo tipo de dispositivo capaz de manipular la carga elemental.
- Desarrollar un dispositivo adecuado para la integración a gran escala.
- Para realizar el primer dispositivo de transferencia de carga única basado en silicio.
Principales métodos:
- Utilizando dos transistores de efecto de campo (MOSFET, por sus siglas en inglés) de semiconductores de óxido metálico y semiconductores de alambre de silicio estrechamente empacados.
- Desarrollar un esquema para generar y almacenar agujeros en los canales MOSFET.
- Implementar la transferencia de agujeros en el nivel de carga elemental entre los MOSFET.
Principales resultados:
- Se demostró la manipulación exitosa y la transferencia de cargas elementales entre dos MOSFETs de alambre de silicio.
- Se logró un monitoreo preciso de la posición de la carga.
- Funcionó el dispositivo a 25 K, confirmando su función como un dispositivo acoplado a carga.
Conclusiones:
- Se ha realizado un nuevo dispositivo de transferencia de carga única basado en silicio.
- Este dispositivo ofrece un proceso de fabricación más simple y una mejor escalabilidad en comparación con las tecnologías anteriores.
- Esto representa un avance significativo en el campo de la nanoelectrónica y la manipulación de una sola carga.
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