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Ionic Bonding and Electron Transfer

Ionic Bonding and Electron Transfer

Ions are atoms or molecules bearing an electrical charge. A cation (a positive ion) forms when a neutral atom loses one or more electrons from its valence shell, and an anion (a negative ion) forms when a neutral atom gains one or more electrons in its valence shell. Compounds composed of ions are called ionic compounds (or salts), and their constituent ions are held together by ionic bonds: electrostatic forces of attraction between oppositely charged cations and anions.

Molecular and Ionic Solids

Molecular and Ionic Solids

Crystalline solids are divided into four types: molecular, ionic, metallic, and covalent network based on the type of constituent units and their interparticle interactions.
Molecular Solids
Molecular crystalline solids, such as ice, sucrose (table sugar), and iodine, are solids that are composed of neutral molecules as their constituent units. These molecules are held together by weak intermolecular forces such as London dispersion forces, dipole-dipole interactions, or hydrogen bonds, which...

Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Types of Reversible Electrodes

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For electrode reversibility to be maintained, all the reactants and products involved in the half-reaction must be present at the electrode. There are several types of reversible electrodes (half-cells).In metal-metal-ion electrodes, a metal balances electrochemically with a solution of its own ions. Examples are Cu2+|Cu and Zn2+|Zn. Metals that react with the solvent, like group 1 and most group 2 metals, which react with water, and zinc, which reacts with aqueous acidic solutions, cannot be...

The Electrical Double Layer

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In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...

Imperfections in Crystal Structure: Stoichiometric Point Defects

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Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

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Estructura física y carga de inversión en una interfaz de semiconductor con un óxido cristalino.

R A McKee¹, F J Walker, M F Chisholm

¹Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118, USA.

Science (New York, N.Y.)

|July 21, 2001

Resumen

El control a nivel atómico de los óxidos cristalinos en los semiconductores permite una manipulación precisa de las propiedades eléctricas. Este avance permite nuevas interfaces libres de carga en dispositivos semiconductores de óxido metálico, abriendo nuevas vías en la electrónica de estado sólido.

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Área de la Ciencia:

Física del estado sólido física del estado sólido.
Ciencia de los materiales ciencia de los materiales.
Física de los dispositivos de semiconductores Física de los dispositivos de semiconductores

Sus antecedentes:

Los dispositivos tradicionales de semiconductores de óxido metálico (MOS) se enfrentan a limitaciones en el control de la interfaz.
Comprender y manipular la estructura atómica de las interfaces óxido-semiconductor es crucial para la electrónica avanzada.

Objetivo del estudio:

Para demostrar el control a nivel atómico sobre las propiedades físicas y eléctricas de los óxidos cristalinos en semiconductores.
Diseñar desplazamientos de banda y alineaciones de heterounión para interfaces libres de carga.
Establecer óxidos cristalinos en semiconductores como un nuevo sistema físico para el desarrollo de dispositivos.

Principales métodos:

Modificaciones estructurales y químicas a nivel atómico de las interfaces óxido-semiconductor.
Caracterización de las propiedades de carga de inversión y heterounión.
Fabricación y análisis de nuevos dispositivos semiconductores.

Principales resultados:

Manipulación sistemática de la carga de inversión a través del control a nivel atómico de la estructura del óxido.
Demostración de las compensaciones y alineaciones de la banda de heterounión sintonizable.
Creación exitosa de una interfaz eléctrica entre óxidos polares y semiconductores que está libre de carga de interfaz.

Conclusiones:

La comprensión y la manipulación a nivel atómico son clave para controlar las propiedades eléctricas de los óxidos cristalinos en semiconductores.
Este trabajo introduce un nuevo paradigma para los dispositivos semiconductores de óxido metálico que utilizan nuevas interfaces óxido-semiconductor.
El sistema físico desarrollado ofrece un amplio potencial para la futura innovación en electrónica de estado sólido.