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Mecanismo de la cristalización inducida por hidrógeno del silicio amorfo

Saravanapriyan Sriraman¹, Sumit Agarwal, Eray S Aydil

¹Department of Chemical Engineering, University of California, Santa Barbara, California 93106-5080, USA.

|July 5, 2002

Resumen

El tratamiento con plasma de hidrógeno induce la cristalización en películas de silicio mediante la inserción de átomos H en enlaces tensos. Este mecanismo, observado a través de simulaciones y espectroscopia, ofrece ideas para optimizar los dispositivos optoelectrónicos.

Área de la Ciencia:

Ciencia de los materiales Ciencia de los materiales.
Física del plasma es la física del plasma.
Química del estado sólido.

Sus antecedentes:

Las películas de silicio hidrogenado son cruciales para los dispositivos electrónicos y optoelectrónicos.
Las propiedades de la película dependen de la fracción cristalina y el tamaño del grano, controlados por la nucleación del nanocristal.
Comprender las interacciones hidrógeno-silicio es clave para optimizar la estructura de la película.

Objetivo del estudio:

Para dilucidar el mecanismo de la cristalización inducida por hidrógeno en películas de silicio amorfo hidrogenado.
Para investigar el papel del tratamiento con plasma de hidrógeno en la modificación de la película posterior a la deposición.

Principales métodos:

Se emplearon simulaciones de dinámica molecular para modelar las interacciones atómicas.
Se utilizó la espectroscopia infrarroja para analizar la composición y la estructura de la película.
El tratamiento posterior a la deposición con plasma H(2) o D(2) se realizó en películas de silicio.

Principales resultados:

Se observó que los átomos de hidrógeno se insertaban en enlaces Si-Si tensos durante el tratamiento con plasma.
Este proceso de inserción media la difusión del hidrógeno y la posterior cristalización.
El estudio revela una transición de desorden a orden impulsada químicamente.

Conclusiones:

Los hallazgos aclaran el mecanismo fundamental de la cristalización inducida por hidrógeno en películas de silicio.
Este mecanismo es crucial para adaptar las propiedades electrónicas y ópticas de los materiales optoelectrónicos.
El mecanismo identificado puede aplicarse a otros materiales enlazados covalentemente que interactúan con hidrógeno.

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