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Network Covalent Solids02:18

Network Covalent Solids

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Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
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Crystal Field Theory - Octahedral Complexes02:58

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Crystal Field Theory
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
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Non-ohmic Devices00:51

Non-ohmic Devices

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In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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P-N junction01:11

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Heterogeneous Catalysis01:22

Heterogeneous Catalysis

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Heterogeneous catalysis involves a catalyst in a different phase from the reactants. It is a process where the catalyst and the reactants are in distinct phases, typically solid and gas or liquid.Most heterogeneous catalysts are metals, metal oxides, or acids. The list includes transition metals like iron (Fe), cobalt (Co), nickel (Ni), palladium (Pd), platinum (Pt), chromium (Cr), manganese (Mn), tungsten (W), silver (Ag), and copper (Cu). These metals possess partially vacant d orbitals that...
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Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
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Las heteroestructuras epitaxiales de núcleo-capa y núcleo-multi-capa de nanocable son heterostructuras epitaxiales de

Lincoln J Lauhon1, Mark S Gudiksen, Deli Wang

  • 1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.

Nature
|November 8, 2002
PubMed
Resumen

Los investigadores desarrollaron nuevos nanocables de núcleo de silicona y germanio usando deposición de vapor químico. Este avance permite la composición radial y el control de dopaje para dispositivos electrónicos y fotónicos avanzados.

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Área de la Ciencia:

  • Ciencia de los materiales Ciencia de los materiales.
  • Nanotecnología La nanotecnología es la nanotecnología.
  • Física del estado sólido Física del estado sólido

Sus antecedentes:

  • Las heteroestructuras de semiconductores son cruciales para los dispositivos electrónicos y fotónicos avanzados.
  • El control de las interfaces en los bloques de construcción a nanoescala es vital para la funcionalidad del dispositivo.
  • La composición radial y la modulación de dopaje en nanocables siguen siendo menos exploradas que los sistemas planos.

Objetivo del estudio:

  • Para sintetizar el silicio y el germanio de núcleo-capa y multicapa nanowire heterostructures.
  • Para investigar la composición radial y el control de dopaje en el crecimiento de nanocables.
  • Demostrar el potencial de estas estructuras para nuevas aplicaciones de dispositivos.

Principales métodos:

  • La deposición de vapor químico (CVD) para la síntesis de las heteroestructuras de nanocables.
  • Crecimiento de cáscaras de silicio dopadas con boro en los nanocables de silicón intrínseco y núcleo de cáscara de óxido de silicio y silicio y silicio.
  • El crecimiento heteroepitaxial de las estructuras núcleo-capa de germanio-silicio y silicio-germanio.

Principales resultados:

  • Se logró la homoepitaxia de capas de silicio sobre silicio a temperaturas relativamente bajas.
  • Se ha demostrado el crecimiento heteroepitaxial de las estructuras cristalinas Ge-Si y Si-Ge del núcleo de la cáscara.
  • Estructuras de núcleo multicapa sintetizadas con éxito, incluido un transistor de efecto de campo de alto rendimiento.

Conclusiones:

  • El crecimiento de la heterostructura radial en nanocables es un enfoque viable para crear materiales avanzados.
  • Las compensaciones de banda en las estructuras de núcleo-caparazón pueden controlar la inyección del portador.
  • Los métodos desarrollados ofrecen un potencial significativo para futuros dispositivos electrónicos y fotónicos basados en nanocables.