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Transistor de conductividad y efecto de campo de La2@C80 metallofullereno
Shin-ichiro Kobayashi1, Satoshi Mori, Satoru Iida
1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
Journal of the American Chemical Society
|July 3, 2003
Resumen
Demostramos el funcionamiento del transistor de efecto de campo en el lantano dimetallofullereno (La2@C80). El comportamiento del semiconductor de tipo n sugiere una conducción portadora a través de iones La encapsulados, con baja movilidad que indica mecanismos de salto.
Área de la Ciencia:
- Ciencia de los materiales Ciencia de los materiales.
- Física de la materia condensada Física de la materia condensada
- Nanotecnología La nanotecnología es la nanotecnología.
Sus antecedentes:
- Los dimetalofulerenos son nuevos compuestos de jaula de carbono con aplicaciones electrónicas potenciales.
- Los dimetallofullerenos de lantano (La2@C80) exhiben propiedades electrónicas únicas debido a los iones metálicos encapsulados.
Objetivo del estudio:
- Para investigar el rendimiento del transistor de efecto de campo (FET) de La2@C80.
- Para aclarar el mecanismo de transporte de carga en películas delgadas La2@C80.
Principales métodos:
- Fabricación de dispositivos de película delgada con el uso de La2@C80.
- Caracterización del rendimiento del dispositivo en condiciones de alto vacío y temperatura ambiente.
- Análisis de las propiedades de transporte eléctrico para determinar el tipo y la movilidad del semiconductor.
Principales resultados:
- Funcionamiento FET demostrado de La2@C80 con simetría de jaula icosaédrica.
- Comportamiento observado de semiconductores de tipo n con una movilidad de 1,1 x 10^-4 cm^2/V s.
- La conducción de tipo n atribuida a los iones de lantano encapsulados que interactúan con el orbital molecular desocupado más bajo (LUMO).
Conclusiones:
- La2@C80 exhibe propiedades semiconductoras de tipo n adecuadas para aplicaciones de transistores.
- La baja movilidad sugiere un mecanismo de transporte de salto intermolecular.
- Se necesita más investigación para optimizar la movilidad abordando factores intrínsecos y extrínsecos.
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