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Synthesis and Characterization of Fe-doped Aluminosilicate Nanotubes with Enhanced Electron Conductive Properties
Published on: November 15, 2016
Comportamiento de almacenamiento de carga de los transistores de nanocables funcionalizados con moléculas de bis
Chao Li1, Wendy Fan, Daniel A Straus
1Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035, USA.
Journal of the American Chemical Society
|June 24, 2004
Resumen
Las moléculas de bis (terpiridina) -Fe (II) mejoran significativamente el almacenamiento de carga de los transistores de nanocables. La estructura de los ligandos, específicamente los grupos de cabezas de tiolato y la longitud, mejora el tiempo de retención y la estabilidad de voltaje, demostrando características de dispositivo a medida a través de la síntesis química.
Área de la Ciencia:
- Ingeniería Molecular Ingeniería Molecular
- La electrónica electrónica a nanoescala también lo es.
- Ciencia de los materiales Ciencia de los materiales.
Sus antecedentes:
- Los nanocables de óxido de indio son cruciales para los canales de conducción de transistores.
- Los complejos Bis (terpiridina) -Fe (II) ofrecen propiedades electrónicas sintonizables.
- El control del almacenamiento de carga en los transistores de nanocables es clave para los dispositivos de memoria avanzados.
Objetivo del estudio:
- Para investigar el impacto de la estructura molecular de bis (terpiridina) -Fe (II) en el almacenamiento de carga de los transistores de nanocables.
- Para correlacionar las modificaciones de los ligandos con el tiempo de retención de carga y el cambio de voltaje umbral.
- Para evaluar la estabilidad de las características de la memoria en condiciones de vacío.
Principales métodos:
- Síntesis de tres moléculas bis ((terpiridina) -Fe ((II) con ligandos variados (H, SAc, 4-fenil-SAc).
- El ensamblaje de moléculas en superficies de nanocables de óxido de indio para formar dispositivos de transistores.
- Caracterización eléctrica, incluidas las curvas I-Vg y las mediciones de retención, en condiciones variables.
Principales resultados:
- Las características de almacenamiento de carga (tiempo de retención y cambio de voltaje de umbral) mejoraron con el aumento de la complejidad del ligando (1 < 2 < 3).
- Los tiempos de retención oscilaron entre 200 s y 287 h, y el voltaje umbral cambia de 4.8 V a 28 V.
- Los dispositivos con ligandos más complejos exhibieron una mayor estabilidad de histeresis bajo vacío, lo que indica una mejor retención de carga.
Conclusiones:
- Los grupos de cabeza de tiolato y las longitudes de ligando más largas aumentan la barrera de túnel de carga, lo que lleva a una retención de carga más larga.
- La síntesis química proporciona una vía para diseñar transistores de nanocables con características de memoria personalizadas.
- El estudio destaca el potencial del diseño molecular para el desarrollo de dispositivos de memoria de nanocables estables y eficientes.
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