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Observación general del comportamiento del efecto de campo de tipo n en semiconductores orgánicos

Lay-Lay Chua¹, Jana Zaumseil, Jui-Fen Chang

¹Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK.

|March 11, 2005

Resumen

Los investigadores lograron la conducción de tipo n en semiconductores orgánicos mediante el uso de un dieléctrico de puerta libre de hidroxilo. Este avance supera los problemas de atrapamiento de electrones, lo que permite una mayor movilidad de electrones para la electrónica orgánica avanzada.

Área de la Ciencia:

Ciencia de los materiales Ciencia de los materiales.
Electrónica orgánica y electrónica orgánica.
Física de los semiconductores Física de los semiconductores

Sus antecedentes:

Los semiconductores orgánicos son cruciales para aplicaciones emergentes como pantallas y circuitos imprimibles.
Por lo general, los transistores orgánicos de efecto de campo (FET) exhiben una conducción de tipo p debido a una fuerte captura de electrones, lo que limita el rendimiento del tipo n.
Los semiconductores orgánicos de tipo n existentes son raros, a menudo requieren materiales específicos de alta afinidad electrónica o baja brecha de banda.

Objetivo del estudio:

Para demostrar la conducción del transistor de efecto de campo (FET) de n canales en una gama más amplia de polímeros conjugados.
Identificar la causa principal de la dificultad histórica para lograr la conducción de tipo n en los FET orgánicos.
Permitir el desarrollo de circuitos de semiconductores orgánicos complementarios de óxido metálico (CMOS).

Principales métodos:

Se utilizó un dieléctrico de puerta libre de hidroxilo, específicamente un derivado divinyltetramethylsiloxane-bis ((benzociclobuteno) (BCB).
Fabricados y caracterizados FET orgánicos utilizando varios polímeros conjugados con el nuevo dieléctrico.
Mecanismos de captura de electrones investigados en la interfaz dieléctrica-semiconductor.

Principales resultados:

Se logró la conducción FET de n canales en la mayoría de los polímeros conjugados utilizando el dieléctrico BCB.
Se midieron movilidades significativas de electrones (10^-3 a 10^-2 cm^2 V^-1 s^-1) en copolímeros de polifluoreno y poli (p-fenilenovileno) sustituido por dialquilo.
Se identificaron grupos hidroxilo (silanoles) en los dieléctricos convencionales de SiO2 como la causa principal de la captura de electrones.

Conclusiones:

El uso de dieléctricos de puerta libres de hidroxilo es clave para desbloquear la conducción de tipo n en semiconductores orgánicos.
Los electrones son más móviles en estos materiales de lo que se suponía anteriormente.
Esta investigación allana el camino para circuitos CMOS orgánicos prácticos que aprovechan las funcionalidades de tipo p y tipo n.

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