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Transistores orgánicos de efecto de campo de alto rendimiento basados en complejos anfifílicos tris
1Key Lab for Colloid and Interface Chemistry of Education Ministry, Department of Chemistry, Shandong University, Jinan 250100, China.
Journal of the American Chemical Society
|November 10, 2005
Resumen
Los investigadores crearon películas Langmuir-Blodgett (LB) ordenadas a partir de complejos de tierras raras de tres pisos. Estas películas lograron altas movilidades de portadores en dispositivos de transistores de efecto de campo (FET), mostrando una promesa para la electrónica orgánica.
Área de la Ciencia:
- Ciencia de los materiales Ciencia de los materiales.
- Electrónica orgánica y electrónica orgánica.
- Química supramolecular de las moléculas.
Sus antecedentes:
- Amphiphilic tris ((phthalocyaninato) complejos de tres pisos de tierras raras ofrecen propiedades electrónicas únicas.
- Las películas Langmuir-Blodgett (LB) permiten un control preciso de la organización molecular para dispositivos avanzados.
Objetivo del estudio:
- Para preparar y caracterizar películas LB de nuevos complejos de tierras raras de tres pisos.
- Fabricar y evaluar el rendimiento de los dispositivos de transistores de efecto de campo (FET) basados en estas películas LB.
Principales métodos:
- Preparación de películas LB utilizando complejos anfifílicos de tierras raras de tres pisos.
- Caracterización utilizando isotermas pi-A, UV-vis y espectroscopia de absorción polarizada, difracción de rayos X y microscopía.
- Fabricación de dispositivos de transistores orgánicos de efecto de campo (OFET).
Principales resultados:
- Las películas LB exhibieron estructuras de capas altamente ordenadas.
- Las movilidades de la portadora en los dispositivos FET fabricados alcanzaron 0.24-0.60 cm2 V-1 s-1.
- Estas movilidades se encuentran entre las más altas reportadas para los OFET basados en películas de LB.
Conclusiones:
- Se pueden preparar con éxito películas LB bien ordenadas a partir de estos complejos de tres pisos de tierras raras.
- Los OFET fabricados demuestran excelentes propiedades de transporte de carga.
- Estos materiales muestran un potencial significativo para aplicaciones en electrónica orgánica de alto rendimiento.
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