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Características eléctricas y estabilidad química de los nanocables de silicio no oxidados y terminados en metilo
Hossam Haick1, Patrick T Hurley, Allon I Hochbaum
1Division of Chemistry and Chemical Engineering, California Institute of Technology, MC 127-72, 1200 East California Boulevard, Pasadena, California 91125, USA.
Journal of the American Chemical Society
|July 13, 2006
Resumen
Los nanocables de silicio funcionalizados covalentemente (Si NW) ofrecen una excelente estabilidad atmosférica y un alto rendimiento. Estos Si NW modificados permiten la creación de robustos transistores de efecto de campo (FET) estables en el aire con relaciones de encendido-apagado superiores.
Área de la Ciencia:
- Ciencia de los materiales Ciencia de los materiales.
- Nanotecnología La nanotecnología es la nanotecnología.
- Física de los semiconductores Física de los semiconductores
Sus antecedentes:
- Los nanocables de silicio (Si NW) son prometedores para los dispositivos electrónicos, pero a menudo sufren de oxidación superficial e inestabilidad.
- Lograr una electrónica estable y de alto rendimiento basada en Si NW requiere estrategias efectivas de pasivación superficial.
Objetivo del estudio:
- Para investigar la estabilidad atmosférica y las propiedades electrónicas de los nanocables de silicio funcionalizados con grupos covalentes Si-CH3.
- Demostrar la fabricación y el rendimiento de los transistores de efecto de campo (FET) utilizando estos Si NW modificados.
Principales métodos:
- Modificación covalente de las superficies de Si NW con grupos metilo (CH3), eliminando las capas de óxido intermedias.
- Fabricación de transistores de efecto de campo (FET) Si NW utilizando los nanocables funcionalizados.
- Caracterización eléctrica de los Si NW FET bajo condiciones ambientales.
Principales resultados:
- El Si-CH3 funcionalizado Si NWs exhibió una notable estabilidad atmosférica sin degradación.
- Se observaron altos valores de conductividad y niveles significativamente reducidos de defectos de superficie.
- Se fabricaron con éxito Si NW FETs estables al aire, logrando relaciones de encendido-apagado superiores a 10^5.5.
- Los transistores funcionaron con eficacia en un pequeño cambio de tensión de puerta de +/-2 V.
Conclusiones:
- La funcionalización covalente Si-CH3 proporciona una pasivación efectiva para los nanocables de silicio, mejorando su estabilidad y rendimiento electrónico.
- Este enfoque permite el desarrollo de transistores de efecto de campo Si NW altamente estables y eficientes para aplicaciones electrónicas.
- Los resultados destacan una vía viable para la realización de dispositivos robustos basados en nanocables de silicio en entornos ambientales.
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