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1-Pireno de nitróxido de imino para transistores orgánicos de efecto de campo de alto rendimiento con bajo voltaje de

Ying Wang¹, Hongmei Wang, Yunqi Liu

¹Key Laboratory of Organic Solids, Center for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, China.

Journal of the American Chemical Society

|October 5, 2006

Resumen

Los transistores orgánicos de efecto de campo (OFET) que utilizan películas de pireno de 1-imino nitróxido demuestran un alto rendimiento. Estos OFET exhiben excelentes características de tipo p, bajo voltaje de funcionamiento e impresionante movilidad para aplicaciones electrónicas avanzadas.

Área de la Ciencia:

La electrónica orgánica es la electrónica orgánica.
Ciencia de los materiales ciencia de los materiales.
Física de los semiconductores física de los semiconductores.

Sus antecedentes:

Los transistores orgánicos de efecto de campo (OFET) son cruciales para la electrónica flexible.
El desarrollo de semiconductores orgánicos de alto rendimiento es un desafío continuo.
El 1-imino nitróxido pireno es un nuevo material para la fabricación de OFET.

Objetivo del estudio:

Para investigar el rendimiento de los OFET fabricados con películas de pireno de nitróxido de 1-imino depositadas en vapor.
Para caracterizar las propiedades eléctricas, incluida la movilidad y la relación encendido/apagado.
Para evaluar el voltaje de funcionamiento y la pendiente subumbral para aplicaciones potenciales.

Principales métodos:

Fabricación de OFETs utilizando películas depositadas en vapor de 1-imino nitróxido pireno.
Medición de las características del transistor de efecto de campo tipo p.
Análisis de la movilidad del portador de carga, relación encendido/apagado, voltaje umbral y pendiente subumbral.

Principales resultados:

Logró excelentes características de FET tipo p con movilidad de hasta 0,1 cm2 V−1 s−1.1.
Se observó una relación encendido/apagado de casi 5 x 104,4.
Demostró una tensión de funcionamiento notablemente baja debido a una tensión de umbral baja (aprox. -0.6 V) y la pendiente subumbral inversa (aprox. 540 mV por década).

Conclusiones:

El 1-imino nitróxido pireno es un material prometedor para OFET de alto rendimiento de tipo p.
El bajo voltaje de funcionamiento y las excelentes características hacen que estos OFET sean adecuados para diversas aplicaciones electrónicas.
La deposición por vapor es un método eficaz para fabricar películas OFET de alta calidad.

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