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Transistores tipo n estables al aire de alto rendimiento con una configuración de dispositivo asimétrica basada en
Qingxin Tang1, Hongxiang Li, Yaling Liu
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, People's Republic of China.
Journal of the American Chemical Society
|November 9, 2006
Resumen
Los transistores de alto rendimiento y estabilidad al aire del tipo n se fabricaron utilizando cintas de hexadecafluoroftalocianina (F(16) CuPc de cobre monocristalino. Las nuevas configuraciones de dispositivos permitieron una mejor inyección y transporte de electrones para la electrónica orgánica.
Área de la Ciencia:
- La electrónica orgánica es la electrónica orgánica.
- Ciencia de los materiales ciencia de los materiales.
- Física de los semiconductores física de los semiconductores.
Sus antecedentes:
- El desarrollo de transistores orgánicos de efecto de campo tipo n estables al aire (OFET) es crucial para las aplicaciones electrónicas avanzadas.
- Los semiconductores orgánicos monocristalinos ofrecen propiedades superiores de transporte de carga en comparación con sus contrapartes amorfas.
- El cobre hexadecafluoroftalocianina (F(16) CuPc) es un material semiconductor orgánico de tipo n prometedor.
Objetivo del estudio:
- Para investigar el rendimiento de transistores de efecto de campo de tipo n (OFET) de alto rendimiento, estables al aire.
- Explorar el uso de cintas monocristalinas submicro y nanométricas de hexadecafluoroftalocianina de cobre (F(16) CuPc).
- Evaluar una nueva configuración de dispositivo para mejorar la inyección y el transporte de electrones.
Principales métodos:
- Síntesis de cintas submicro y nanométricas de F(16) CuPc a través del transporte físico de vapor.
- Caracterización mediante difracción de rayos X en polvo y microscopía electrónica de transmisión (TEM).
- Fabricación de OFETs con cristales cultivados in situ y electrodos de drenaje/fuente asimétricos (Au/Ag).
Principales resultados:
- F(16) CuPc cristalizado en una estructura distinta de la ftaalocianina de cobre.
- El crecimiento in situ en sustratos de Si/SiO2 aseguraba un contacto íntimo, evitando problemas de fabricación.
- Los dispositivos con electrodos asimétricos exhibieron una mayor inyección y transporte de electrones.
- Se logró una movilidad de efecto de campo de ~0.2 cm(2) V(-1) s(-1) y una relación encendido/apagado de ~6 x 10(4).
Conclusiones:
- Los OFET de alto rendimiento y estabilidad al aire del tipo n se pueden fabricar utilizando cintas monocristalinas F ((16) CuPc.
- La nueva configuración del dispositivo y el proceso de crecimiento in situ son clave para lograr un rendimiento superior del dispositivo.
- Estos hallazgos allanan el camino para aplicaciones prácticas de semiconductores orgánicos de tipo n en dispositivos electrónicos estables al aire.
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