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Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Superconductor

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A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...

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A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...

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The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...

Valence Bond Theory

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Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...

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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

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Published on: December 2, 2013

Superconductividad en el silicio cúbico dopado.

E Bustarret¹, C Marcenat, P Achatz

¹Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, BP166, 38042 Grenoble, France. etienne.bustarret@grenoble.cnrs.fr

|November 24, 2006

Resumen

La superconductividad se ha logrado en silicio por primera vez mediante la introducción de altas concentraciones de boro. Este avance permite el desarrollo de nuevas nanoestructuras y dispositivos superconductores basados en silicio.

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Área de la Ciencia:

Física de la materia condensada Física de la materia condensada
Ciencia de los materiales Ciencia de los materiales.
Física de los semiconductores Física de los semiconductores

Sus antecedentes:

La resistividad del silicio es sintonizable mediante dopaje, pero no se ha observado superconductividad.
Los dispositivos híbridos que integran silicio y superconductores están poco desarrollados.

Objetivo del estudio:

Para inducir la superconductividad en el silicio.
Para explorar nanoestructuras y dispositivos superconductores basados en silicio.

Principales métodos:

El dopaje láser de inmersión en gas para lograr altas concentraciones de boro en el silicio.
Medidas de la resistividad eléctrica y la susceptibilidad magnética.
Cálculos ab initio y espectroscopia Raman.

Principales resultados:

Superconductividad inducida en silicio dopado con boro (Si:B) a una temperatura de transición (T ((c)) de aproximadamente 0,35 K.
Se observó un campo magnético crítico de aproximadamente 0,4 T.
El dopaje confirmado como sustitutivo, con un mecanismo de acoplamiento convencional mediado por fonón.

Conclusiones:

El dopaje de boro en alta concentración permite la superconductividad en el silicio.
Esta investigación allana el camino para nanoestructuras superconductoras basadas en silicio y dispositivos mesoscópicos con interfaces de alta calidad.