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Superconductividad en el silicio cúbico dopado
E Bustarret1, C Marcenat, P Achatz
1Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, BP166, 38042 Grenoble, France. etienne.bustarret@grenoble.cnrs.fr
Nature
|November 24, 2006
Resumen
La superconductividad se ha logrado en silicio por primera vez mediante la introducción de altas concentraciones de boro. Este avance permite el desarrollo de nuevas nanoestructuras y dispositivos superconductores basados en silicio.
Área de la Ciencia:
- Física de la materia condensada Física de la materia condensada
- Ciencia de los materiales Ciencia de los materiales.
- Física de los semiconductores Física de los semiconductores
Sus antecedentes:
- La resistividad del silicio es sintonizable mediante dopaje, pero no se ha observado superconductividad.
- Los dispositivos híbridos que integran silicio y superconductores están poco desarrollados.
Objetivo del estudio:
- Para inducir la superconductividad en el silicio.
- Para explorar nanoestructuras y dispositivos superconductores basados en silicio.
Principales métodos:
- El dopaje láser de inmersión en gas para lograr altas concentraciones de boro en el silicio.
- Medidas de la resistividad eléctrica y la susceptibilidad magnética.
- Cálculos ab initio y espectroscopia Raman.
Principales resultados:
- Superconductividad inducida en silicio dopado con boro (Si:B) a una temperatura de transición (T ((c)) de aproximadamente 0,35 K.
- Se observó un campo magnético crítico de aproximadamente 0,4 T.
- El dopaje confirmado como sustitutivo, con un mecanismo de acoplamiento convencional mediado por fonón.
Conclusiones:
- El dopaje de boro en alta concentración permite la superconductividad en el silicio.
- Esta investigación allana el camino para nanoestructuras superconductoras basadas en silicio y dispositivos mesoscópicos con interfaces de alta calidad.
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