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Un vidrio electrónico intrínseco centrado en el enlace con dominios unidireccionales en cupratos bajo dopaje
Y Kohsaka1, C Taylor, K Fujita
1Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, USA.
Science (New York, N.Y.)
|February 10, 2007
Resumen
Las imágenes de asimetría de túneles revelan patrones electrónicos en cupratos, mostrando la localización parcial del agujero en un vidrio electrónico. Esto evoluciona hacia la superconductividad en densidades de agujero más altas.
Área de la Ciencia:
- Física de la materia condensada Física de la materia condensada
- Ciencia de los materiales Ciencia de los materiales.
Sus antecedentes:
- La eliminación de electrones de los planos CuO2 de los cupratos induce la superconductividad a alta temperatura.
- Este proceso implica la transferencia de peso espectral y la asimetría teórica del túnel.
Objetivo del estudio:
- Introducir y aplicar imágenes de asimetría de túneles de resolución atómica.
- Para investigar la asimetría de los túneles en cupratos ligeramente dopados con agujeros.
Principales métodos:
- Imágenes de asimetría de túneles de resolución atómica.
- Análisis de las muestras de Ca{1.88) Na{0.12) CuO{2) Cl2 y Bi2Sr2Dy{0.2) Ca{0.8) Cu2O{8+delta).
Principales resultados:
- Fenómenos idénticos de asimetría de túneles observados en ambos cuprados.
- Variaciones espaciales intensas en la asimetría del túnel localizadas en sitios de oxígeno plano.
- Formación de dominios electrónicos unidireccionales (4a(0) de ancho) sin orden de largo alcance.
Conclusiones:
- Se observa una localización parcial de agujero dentro de un vidrio electrónico intrínseco.
- Este vidrio electrónico evoluciona hacia la deslocalización completa y la superconductividad en densidades de agujero más altas.
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