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Videos de Conceptos Relacionados

Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Atomic Nuclei: Nuclear Spin State Population Distribution01:14

Atomic Nuclei: Nuclear Spin State Population Distribution

Near absolute zero temperatures, in the presence of a magnetic field, the majority of nuclei prefer the lower energy spin-up state to the higher energy spin-down state. As temperatures increase, the energy from thermal collisions distributes the spins more equally between the two states. The Boltzmann distribution equation gives the ratio of the number of spins predicted in the spin −½ (N−) and spin +½ (N+) states.
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Electrochemical Systems01:24

Electrochemical Systems

Electrochemical systems provide a fascinating insight into the dynamic interplay of charged species within various phases. One notable example is the interaction between a membrane permeable to K⁺ ions but not to Cl⁻ ions, separating an aqueous KCl solution from pure water. As K⁺ ions diffuse through the membrane, they generate net charges on each phase, leading to a potential difference between them.Similarly, when a piece of Zn is immersed in an aqueous ZnSO₄ solution, the Zn metal, composed...
Electric Field of Two Equal and Opposite Charges01:30

Electric Field of Two Equal and Opposite Charges

Atoms generally contain the same number of positively and negatively charged particles, protons, and electrons. Hence, they are electrically neutral. However, the centers of the positive and negative charges do not always coincide. In such a scenario, the electric field of an atom may not be zero.
A separation of the positive and negative charges can lead to a weak, remnant effect of the positive and negative charges. The expectation is that the more the distance between the positive and...
Atomic Radii and Effective Nuclear Charge03:08

Atomic Radii and Effective Nuclear Charge

The elements in groups of the periodic table exhibit similar chemical behavior. This similarity occurs because the members of a group have the same number and distribution of electrons in their valence shells.

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Video Experimental Relacionado

Updated: Jul 12, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Resistencia diferencial negativa a escala atómica: implicaciones para los dispositivos a escala atómica.

I W Lyo, P Avouris

    Science (New York, N.Y.)
    |September 22, 1989
    PubMed
    Resumen

    La resistencia diferencial negativa (NDR, por sus siglas en inglés) permite la conmutación rápida de dispositivos electrónicos. Los investigadores observaron NDR en una superficie de silicio expuesta al boro a escala atómica, como resultado del túnel a través de estados localizados.

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    Área de la Ciencia:

    • Ciencia de los materiales Ciencia de los materiales.
    • Ciencias de la superficie Ciencias de la superficie.
    • Física de la materia condensada Física de la materia condensada

    Sus antecedentes:

    • La resistencia diferencial negativa (NDR) es crucial para los dispositivos electrónicos de alta velocidad.
    • La comprensión de NDR a nanoescala es clave para el avance de la tecnología de semiconductores.

    Objetivo del estudio:

    • Para investigar el origen de la NDR a nivel atómico en una superficie de silicio expuesta al boro.
    • Demostrar la viabilidad de lograr características de dispositivos a escala atómica.

    Principales métodos:

    • Utilizó microscopía de túnel de barrido (STM) para la obtención de imágenes a escala atómica.
    • Espectroscopia de túnel de barrido (STS) empleada para analizar las características de corriente-voltaje.

    Principales resultados:

    • NDR observado en una configuración de diodo utilizando una punta STM sobre sitios específicos en una superficie de silicio expuesta al boro.
    • Se han identificado sitios activos de NDR de dimensiones atómicas (aproximadamente 1 nanómetro).
    • NDR atribuido al túnel cuántico a través de estados localizados, similares a los atómicos.

    Conclusiones:

    • La NDR se puede lograr a escala atómica en superficies específicas de semiconductores.
    • Los estados electrónicos localizados son responsables de los fenómenos NDR a esta escala.
    • El NDR a escala atómica abre posibilidades para nuevos dispositivos electrónicos a nanoescala.