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Imágenes de atmósferas de Cottrell de arsénico alrededor de defectos de silicio mediante tomografía tridimensional
Keith Thompson1, Philip L Flaitz, Paul Ronsheim
1Imago Scientific Instruments Corporation, 5500 Nobel Drive, Madison, WI 53711, USA. kthompson@imago.com
Science (New York, N.Y.)
|September 8, 2007
Resumen
Las atmósferas de Cottrell de átomos de arsénico se forman alrededor de los defectos de silicio después de la implantación de iones y el recocido. Estos grupos de átomos de impurezas persisten, lo que potencialmente limita la escalabilidad de los nanodispositivos de silicio debido a las fluctuaciones del dopaje.
Área de la Ciencia:
- Ciencia de los materiales Ciencia de los materiales.
- Física de los semiconductores Física de los semiconductores
- Nanotecnología La nanotecnología es la nanotecnología.
Sus antecedentes:
- El control preciso de los átomos de dopante es esencial para las propiedades eléctricas y la fabricación de los nanodispositivos de silicio.
- Los defectos introducidos durante la implantación iónica pueden conducir a una distribución no uniforme del dopante, lo que dificulta el rendimiento del dispositivo.
Objetivo del estudio:
- Investigar la formación y persistencia de atmósferas de Cottrell alrededor de defectos en el silicio.
- Para comprender el impacto de estas atmósferas en la distribución de dopantes y la escalabilidad del dispositivo.
Principales métodos:
- Utilizó tomografía de sonda atómica para identificar y localizar átomos cerca de defectos en el silicio.
- Se analizaron muestras de silicio después de la implantación de iones y el recocido para observar el comportamiento del dopante.
Principales resultados:
- Confirmó la formación de atmósferas de Cottrell compuestas de átomos de arsénico alrededor de los defectos después de la implantación y el recocido.
- Se observó que estas atmósferas de arsénico permanecen asociadas con bucles de dislocación incluso después de un tratamiento térmico extenso.
Conclusiones:
- Las atmósferas de Cottrell de átomos de arsénico son un factor significativo que afecta la uniformidad del dopante en el silicio.
- Estos grupos de átomos de impurezas persistentes plantean un desafío para la escalabilidad de los nanodispositivos basados en silicio.
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