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Modulación molecular controlable de la conductividad en dispositivos basados en silicio

Tao He¹, David A Corley, Meng Lu

¹Department of Chemistry, Rice University, Houston, Texas 77005, USA.

Journal of the American Chemical Society

|July 3, 2009

Resumen

El injerto de monocapas moleculares en canales de silicio ofrece un nuevo método para controlar la conductividad en dispositivos a nanoescala. Este enfoque imita el dopaje y el gating tradicionales, lo que permite una modulación precisa de las propiedades electrónicas.

Área de la Ciencia:

Ciencia de los materiales Ciencia de los materiales.
Nanotecnología La nanotecnología es la nanotecnología.
Física del estado sólido Física del estado sólido

Sus antecedentes:

La conductividad del silicio se basa en portadores de carga móviles, sintonizables a través de puertas y dopaje.
La fabricación de dispositivos a nanoescala enfrenta desafíos con el dopaje tradicional debido a las inhomogeneidades.

Objetivo del estudio:

Investigar el uso de monocapas moleculares injertadas covalentemente como una alternativa al dopaje y el gating tradicionales en nanodispositivos de silicio.
Para demostrar la modulación controlable de la conductividad en pseudo-MOSFETs utilizando el injerto molecular.

Principales métodos:

Injerto covalente de monocapas moleculares en canales de silicio.
Caracterización de la transferencia de carga y la flexión de la banda superficial.
Fabricación y pruebas de dispositivos pseudo-MOSFET.

Principales resultados:

Las monocapas moleculares actúan como donantes o aceptadores, influyendo en las propiedades electrónicas del silicio.
El injerto induce efectos similares al dopaje y al gating, modulando de manera controlable la conductividad.
Se observó que los efectos moleculares penetraban a través de una capa de silicio de 4,92 μm.

Conclusiones:

Las monocapas moleculares proporcionan un paradigma viable para el control de las características electrónicas en nanodispositivos.
Esta técnica ofrece una solución para el control electrónico preciso en futuros nodos de tecnología diminuta.
El estudio presenta un nuevo enfoque para la ingeniería avanzada de dispositivos de semiconductores.

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