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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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Transistores de memoria orgánicos no volátiles para conjuntos de sensores flexibles.

Tsuyoshi Sekitani1, Tomoyuki Yokota, Ute Zschieschang

  • 1Department of Electrical and Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.

Science (New York, N.Y.)
|December 17, 2009
PubMed
Resumen
Este resumen es generado por máquina.

Los investigadores desarrollaron matrices de memoria orgánicas no volátiles flexibles utilizando dieléctricos híbridos. Estas matrices permiten el funcionamiento de baja tensión y se pueden integrar en matrices de sensores para la obtención de imágenes de presión.

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Área de la Ciencia:

  • Ciencia de los materiales Ciencia de los materiales.
  • Electrónica orgánica y electrónica orgánica.
  • Nanotecnología La nanotecnología es la nanotecnología.

Sus antecedentes:

  • Los transistores orgánicos ofrecen potencial para la electrónica flexible.
  • La memoria no volátil es crucial para las aplicaciones de almacenamiento de datos.
  • Los dieléctricos híbridos pueden mejorar el rendimiento del transistor.

Objetivo del estudio:

  • Desarrollar matrices de memoria no volátiles en sustratos flexibles utilizando transistores orgánicos.
  • Para investigar el rendimiento de los dieléctricos híbridos en los transistores orgánicos de puerta flotante.
  • Para crear una matriz de sensores flexible para la obtención de imágenes de presión.

Principales métodos:

  • Fabricación de transistores orgánicos con dieléctricos híbridos (2nm SAM + 4nm óxido metálico cultivado en plasma).
  • Integración de transistores orgánicos de puerta flotante en una matriz de sensores con una lámina de goma sensible a la presión.
  • Caracterización de las características de la memoria no volátil (ciclos de programación/borrado, cambio de voltaje de umbral).

Principales resultados:

  • Logró matrices de memoria no volátiles en sustratos flexibles de plástico.
  • Se han demostrado bajos voltajes de programación/borrado (< o = 6V) con grandes cambios de voltaje de umbral reversibles.
  • Los transistores exhibieron más de 1000 ciclos de programación / borrado.
  • Se creó con éxito una matriz de sensores capaz de detectar y almacenar la distribución de la presión espacial como una imagen 2D.

Conclusiones:

  • Los dieléctricos híbridos permiten una memoria orgánica no volátil de alto rendimiento en sustratos flexibles.
  • La tecnología de memoria orgánica desarrollada es adecuada para aplicaciones flexibles de sensores, incluidas las imágenes de presión.
  • Este trabajo avanza en el desarrollo de dispositivos electrónicos flexibles y de baja potencia para aplicaciones futuras.