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La conmutación de la resistencia en las superredes de magnetita electrodepositada

Jay A Switzer¹, Rakesh V Gudavarthy, Elizabeth A Kulp

¹Department of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, Missouri 65409-1170, USA. jswitzer@mst.edu

Journal of the American Chemical Society

|January 9, 2010

Resumen

Las superredes epitaxiales de magnetita fueron electrodepositadas, exhibiendo una conmutación de resistencia. Estos materiales muestran potencial para la fabricación de dispositivos de memoria de acceso aleatorio resistivo (RRAM).

Área de la Ciencia:

Ciencia de los materiales Ciencia de los materiales.
La electroquímica es electroquímica.
Nanotecnología La nanotecnología es la nanotecnología.

Sus antecedentes:

Las superredes ofrecen propiedades electrónicas sintonizables.
Los materiales basados en magnetita son prometedores para aplicaciones de memoria.

Objetivo del estudio:

Para electrodepositar defectos químicos y composiciones en superretillas de magnetita.
Para investigar su potencial para la memoria de acceso aleatorio resistivo (RRAM).

Principales métodos:

Electrodeposición epitaxial de superredes de magnetita y ferrita de zinc sobre el Au{111}.
Utilizando deposición electroquímica/química (EC) con potencial pulsado.
Caracterización de la química de los defectos y de las superretillas de composición.

Principales resultados:

Fabricó con éxito la química de los defectos epitaxiales y las superrías de composición.
Las superredes de química de defectos demostraron un cambio reversible de resistencia de baja a alta y de alta a baja.

Conclusiones:

La electrodeposición es un método viable para crear superredes de magnetita funcional.
La conmutación de resistencia observada es prometedora para la fabricación de dispositivos RRAM.

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