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Movilidades elevadas y equilibradas de orificios y electrones de transistores de película delgada ambipolares basados
Yi-Yang Liu1, Cheng-Li Song, Wei-Jing Zeng
1State Key Laboratory of Applied Organic Chemistry (SKLAOC), College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China.
Journal of the American Chemical Society
|October 29, 2010
Resumen
Los investigadores diseñaron semiconductores orgánicos de alto rendimiento reemplazando los enlaces C-H con nitrógeno en los transistores de efecto de campo (FET) basados en aceno. Esta estrategia produjo materiales con movilidades equilibradas de electrones y agujeros altos, allanando el camino para aplicaciones avanzadas de FET ambipolares.
Área de la Ciencia:
- La electrónica orgánica es la electrónica orgánica.
- Ciencia de los materiales ciencia de los materiales.
- Física de los semiconductores física de los semiconductores.
Sus antecedentes:
- Los semiconductores orgánicos a base de aceno son cruciales para los transistores de efecto de campo (FET).
- Lograr un transporte equilibrado de carga ambipolar (tanto agujeros como electrones) sigue siendo un desafío en el diseño de materiales orgánicos FET.
- La modificación de las estructuras moleculares es clave para mejorar el rendimiento de los semiconductores.
Objetivo del estudio:
- Desarrollar una nueva estrategia para el diseño de materiales semiconductores orgánicos ambipolares de alto rendimiento.
- Para sintetizar y caracterizar nuevos derivados de oligoaceno que contienen nitrógeno para aplicaciones de FET.
- Para investigar el impacto de la incorporación de nitrógeno en las propiedades de transporte de carga.
Principales métodos:
- Se empleó una estrategia de diseño que implicaba la sustitución de las fracciones C-H por átomos de nitrógeno en la columna vertebral del oligoaceno.
- Se han sintetizado dos nuevos semiconductores orgánicos, el 6,13-bis (((triisopropilsilylethynyl) antradipyridine (1) y el 8,9,10,11-tetrafluoro-6,13-bis (((triisopropilsilylethynyl)-1-azapentaceno (3), los cuales han sido desarrollados en el laboratorio.
- Se midieron las características del transistor de efecto de campo (FET) de los materiales sintetizados para determinar las movilidades de los portadores de carga.
Principales resultados:
- Ambos materiales sintetizados demostraron movilidades de agujero (μ(h)) y electrones (μ(e)) altas y equilibradas.
- El material 1 exhibido μ(h) = 0,11 cm2/V·s y μ(e) = 0,15 cm2/V·s.
- El material 3 mostró μ(h) = 0,08 cm2/V·s y μ(e) = 0,09 cm2/V·s, lo que confirma el comportamiento ambipolar.
Conclusiones:
- La sustitución de C-H por nitrógeno en los oligoacenos es una estrategia viable para crear materiales FET ambipolares de alto rendimiento.
- Los oligoacenos que contienen nitrógeno ofrecen características prometedoras para los dispositivos electrónicos orgánicos avanzados.
- Este trabajo abre nuevas vías para el diseño racional de semiconductores orgánicos ambipolares de próxima generación.
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