Video Experimental Relacionado

Updated: May 10, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Semiconductor compuesto ultrafino en capas de aislantes para transistores de nanoescala de alto rendimiento

Hyunhyub Ko1, Kuniharu Takei, Rehan Kapadia

  • 1Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.

Nature
|November 12, 2010
PubMed
Resumen

Los investigadores desarrollaron un nuevo método para integrar el arseniuro de indio (InAs) en el silicio, creando avanzados transistores semiconductor-on-insulator (XOI). Este enfoque supera las limitaciones de los métodos tradicionales, allanando el camino para dispositivos electrónicos más rápidos.

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