Ultraalta movilidad en los transistores de efecto de campo de polímero por diseño.

Hoi Nok Tsao1, Don M Cho, Insun Park

  • 1Max Planck Institute for Polymer Research, Mainz, Germany.

Resumen

El alto peso molecular en copolímeros donante-aceptante aumenta significativamente las movilidades de agujero en los transistores de efecto de campo (FET). Esta investigación explora el diseño de polímeros para semiconductores orgánicos avanzados con un rendimiento de portador de carga ultraalto.

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