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Impacto de las estructuras isoméricas en el rendimiento de los transistores en polímeros semiconductores de
Itaru Osaka1, Toru Abe, Shoji Shinamura
1Department of Chemistry, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan. iosaka@hiroshima-u.ac.jp
Journal of the American Chemical Society
|April 12, 2011
Resumen
Los naftodiotiofenos angulares (NDT) en las columnas vertebrales de politiofeno aumentan significativamente la movilidad del portador de carga en los semiconductores orgánicos. Los polímeros con NDT3 angular mostraron un rendimiento superior debido al ordenamiento molecular mejorado y la deslocalización electrónica.
Área de la Ciencia:
- La electrónica orgánica es la electrónica orgánica.
- Ciencia de los materiales ciencia de los materiales.
- Química de los polímeros La química de los polímeros es la química de los polímeros.
Sus antecedentes:
- Los semiconductores de politiofeno son cruciales para la electrónica orgánica.
- Los naftoditiofenos (NDT) se exploran como bloques de construcción para mejorar el rendimiento de los semiconductores.
- Comprender las relaciones estructura-propiedad es clave para diseñar materiales de alto rendimiento.
Objetivo del estudio:
- Investigar el impacto de los isómeros de naftodiotiofeno (NDT) lineales y angulares en el rendimiento de los semiconductores de politiofeno.
- Para correlacionar la estructura molecular con la movilidad del portador de carga en polímeros basados en TND.
- Identificar estructuras de TND prometedoras para transistores orgánicos de efecto de campo de alto rendimiento.
Principales métodos:
- Síntesis de cuatro semiconductores isoméricos de politiofeno basados en NDT.
- Caracterización del rendimiento del transistor de efecto de campo, incluida la movilidad del portador de carga.
- Análisis de difracción de rayos X para determinar el ordenamiento estructural del polímero y el apilamiento π.
- Cálculos del orbital molecular (MO) y mediciones del potencial de ionización para analizar estructuras electrónicas.
Principales resultados:
- Los polímeros con NDT3 angular exhibieron las movilidades más altas (∼0.8 cm2 V-1 s-1), entre los mejores reportados para polímeros semiconductores.
- Contrariamente a las expectativas, los polímeros de NDT angulares mostraron una mayor movilidad que los polímeros de NDT lineales.
- La difracción de rayos X reveló estructuras altamente ordenadas con apilamiento π cercano (3,6 Å) en polímeros NDT angulares, a diferencia de los polímeros NDT lineales.
- Los cálculos de MO indicaron HOMOs deslocalizados a lo largo de la columna vertebral en polímeros NDT angulares, promoviendo el transporte eficiente de carga.
Conclusiones:
- Los NDT angulares, particularmente el NDT3, son núcleos prometedores para polímeros semiconductores de alto rendimiento.
- La forma molecular y la estructura electrónica son factores críticos para diseñar un transporte eficiente de portadores de carga en polímeros.
- La columna vertebral pseudo recta impartida por NDT angulares facilita el embalaje altamente ordenado y mejora la movilidad.
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