Search research articles

ACERCA DE JoVE

Visión General Liderazgo Blog Centro de Ayuda JoVE

AUTORES

Proceso de Publicación Consejo Editorial Alcance y Políticas Revisión por Pares Preguntas Frecuentes Enviar

BIBLIOTECARIOS

Testimonios Suscripciones Acceso Recursos Consejo Asesor de Bibliotecas Preguntas Frecuentes

INVESTIGACIÓN

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archivo

EDUCACIÓN

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Centro de Recursos para Profesores Sitio de Profesores

Términos y Condiciones de Uso

Política de Privacidad

Videos de Conceptos Relacionados

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Equivalent Capacitance

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...

Equivalent Capacitance

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...

Capacitors and Capacitance

Capacitors and Capacitance

A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...

Spherical and Cylindrical Capacitor

Spherical and Cylindrical Capacitor

A spherical capacitor consists of two concentric conducting spherical shells of radii R1 (inner shell) and R2 (outer shell). The shells have equal and opposite charges of +Q and −Q, respectively. For an isolated conducting spherical capacitor, the radius of the outer shell can be considered to be infinite.
Conventionally, considering the symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field, calculated by...

Capacitor With A Dielectric

Capacitor With A Dielectric

Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...

También podría leer

Artículos Relacionados

Artículos vinculados a este trabajo por autores compartidos, revista y gráfico de citas.

Ordenar por

Same author

Efficient termination of cardiac arrhythmias using optogenetic resonant feedback pacing.

Chaos (Woodbury, N.Y.)·2024

Same author

Editorial: Artificial intelligence to enhance biomechanical modelling.

Frontiers in sports and active living·2023

Same author

Ångstrom-Depth Resolution with Chemical Specificity at the Liquid-Vapor Interface.

Physical review letters·2023

Same author

Photon-electron coincidence experiments at synchrotron radiation facilities with arbitrary bunch modes.

The Review of scientific instruments·2021

Same author

NMR-based Fragment Screening in a Minimum Sample but Maximum Automation Mode.

Journal of visualized experiments : JoVE·2021

Same author

Corrigendum to "The effects of rehabilitation on the biomechanics of patients with athletic groin pain" [J. Biomech. 99 (2020) 109474].

Journal of biomechanics·2020

Search research articles

Video Experimental Relacionado

Updated: Jun 2, 2026

Scanning-probe Single-electron Capacitance Spectroscopy

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

Mejora de capacitancia muy grande en un sistema de electrones bidimensional.

Lu Li¹, C Richter, S Paetel

¹Department of Physics, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, USA.

Science (New York, N.Y.)

|May 14, 2011

Resumen

Los investigadores descubrieron una mejora significativa en la capacitancia de la puerta en las estructuras de transistores de efecto de campo. Este hallazgo, observado cerca del agotamiento de electrones en las interfaces LaAlO{3}/SrTiO{3}, podría conducir a dispositivos electrónicos más eficientes y de menor potencia.

Más Videos Relacionados

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Videos de Experimentos Relacionados

Last Updated: Jun 2, 2026

Scanning-probe Single-electron Capacitance Spectroscopy

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Área de la Ciencia:

Física de la materia condensada Física de la materia condensada
Ciencia de los materiales Ciencia de los materiales.
Física de los dispositivos Física de los dispositivos

Sus antecedentes:

La capacidad de la puerta del transistor de efecto de campo (FET) es crucial para el desarrollo de electrónica de baja potencia y alta velocidad.
Los dieléctricos de alta k se investigan activamente para aumentar la capacitancia de la puerta.
Los efectos de muchos cuerpos dentro de los sistemas electrónicos también pueden mejorar intrínsecamente la capacitancia.

Objetivo del estudio:

Investigar la mejora de la capacitancia más allá del escalamiento dieléctrico convencional en FET.
Explorar el papel de los efectos de muchos cuerpos en el sistema de interfaz LaAlO(3)/SrTiO(3).
Para entender el origen de la capacitancia de la puerta mejorada en bajas densidades de electrones.

Principales métodos:

Fabricación de electrodos de la puerta superior en la interfaz LaAlO ((3) / SrTiO ((3).
Caracterización eléctrica para lograr el agotamiento total de los electrones de interfaz.
Mediciones de penetración del campo eléctrico para sondear los orígenes de la capacitancia.

Principales resultados:

Se observó una mejora de más del 40% en la capacitancia de la puerta cerca del agotamiento de electrones.
El aumento de la capacitancia se atribuyó a la compresibilidad negativa del sistema de electrones de la interfaz.
El efecto se observó a temperatura ambiente, bajas densidades de electrones y un fuerte desorden.

Conclusiones:

Los efectos de muchos cuerpos, específicamente la compresibilidad negativa, pueden mejorar significativamente la capacitancia de la puerta en sistemas de electrones 2D.
Este fenómeno ofrece una ruta alternativa para mejorar el rendimiento de los FET más allá de los dieléctricos de alto-κ.
Los hallazgos son relevantes para el diseño de electrónica de baja potencia de próxima generación que funcione en condiciones específicas.