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Los transistores multigate son el futuro de los transistores clásicos de efecto de campo de metal-óxido-semiconductor

Isabelle Ferain¹, Cynthia A Colinge, Jean-Pierre Colinge

¹Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland.

|November 19, 2011

Resumen

Los transistores miniaturizados, o transistores de efecto de campo de metal-óxido-semiconductor (MOSFET), se están acercando a los límites físicos. Los nuevos diseños de transistores multigate ofrecen un camino hacia avances continuos en el rendimiento de los chips microelectrónicos.

Área de la Ciencia:

Física del estado sólido Física del estado sólido
Ciencia de los materiales Ciencia de los materiales.
Ingeniería Eléctrica Ingeniería Eléctrica.

Sus antecedentes:

Durante más de 40 años, el escalamiento exponencial de los transistores ha impulsado los avances de los chips microelectrónicos.
El encogimiento de los transistores de efecto de campo de metal-óxido-semiconductor (MOSFET) ha permitido aumentar la densidad del transistor.
Las dimensiones actuales de MOSFET se acercan a los límites donde las características eléctricas se degradan, lo que impide una mayor escalabilidad.

Objetivo del estudio:

Para abordar las limitaciones del escalamiento MOSFET tradicional.
Introducir y resaltar el potencial de los transistores multigate.
Asegurar la mejora continua del rendimiento de las computadoras en la próxima década.

Principales métodos:

Revisión de las tendencias históricas de escalado de transistores.
Análisis de la degradación de las características eléctricas en MOSFETs escalados.
Introducción de la geometría del transistor multigate como una solución novedosa.

Principales resultados:

El encogimiento exponencial del transistor se está acercando a limitaciones físicas fundamentales.
La degradación de las características eléctricas es un desafío importante para los MOSFET actuales.
La arquitectura de transistores multigate emerge como un sucesor viable para los MOSFET planos.

Conclusiones:

La era del escalamiento exponencial de MOSFET está terminando debido a limitaciones físicas.
Los transistores multigate representan una nueva generación de dispositivos capaces de superar estas limitaciones.
Esta nueva geometría es crucial para futuras mejoras en el rendimiento de las computadoras.

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