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Las oscilaciones coherentes singlet-triplet en un punto cuántico doble basado en silicio

B M Maune¹, M G Borselli, B Huang

¹HRL Laboratories LLC, 3011 Malibu Canyon Road, Malibu, California 90265, USA. bmmaune@hrl.com

|January 20, 2012

Resumen

Los investigadores demuestran un control coherente de los espines de los electrones en los puntos cuánticos de silicio, logrando un tiempo de desfase de 360 nanosegundos. Este avance en la computación cuántica de silicio reduce significativamente las interacciones de espín nuclear, allanando el camino para los procesadores cuánticos avanzados.

Área de la Ciencia:

Ciencias de la información cuántica Ciencias de la información cuántica.
Física de la materia condensada Física de la materia condensada
Ciencia de los materiales Ciencia de los materiales.

Sus antecedentes:

El silicio es un material líder para la microelectrónica y es prometedor para las tecnologías de la información cuántica.
El control de los espines de un solo electrón en dispositivos de silicio es factible utilizando métodos de fabricación establecidos.
La interacción débil con los espines nucleares en el silicio ofrece una ventaja sobre otros materiales para la estabilidad de bits cuánticos.

Objetivo del estudio:

Para lograr un control coherente de los espines de los electrones en puntos cuánticos acoplados dentro de una heteroestructura basada en silicio.
Investigar y cuantificar el tiempo de desfase inducido por los núcleos en un sistema de este tipo.
Evaluar el potencial del silicio para el desarrollo de procesadores de información cuántica robustos.

Principales métodos:

Fabricación de una heteroestructura de Si/SiGe no dopada con dos puntos cuánticos acoplados.
Experimentos de control coherente en espines de electrones confinados dentro de estos puntos cuánticos.
Medición del tiempo de desfase inducido por núcleos utilizando técnicas experimentales avanzadas.

Principales resultados:

Se ha demostrado el control coherente de los espines de los electrones en el sistema de puntos cuánticos de silicio.
Logró un tiempo de desfase inducido por el núcleo de 360 nanosegundos.
Se observó una mejora de casi dos órdenes de magnitud en el tiempo de desfase en comparación con los puntos cuánticos basados en GaAs.

Conclusiones:

El sistema de puntos cuánticos de silicio desarrollado exhibe una coherencia de fase significativamente mejorada debido a la reducción de las interacciones de espín nuclear.
Se demuestran capacidades de inicialización eléctrica rápida, lectura y control.
Estos hallazgos apoyan fuertemente el avance de los procesadores de información cuántica basados en silicio.

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